UNISONIC TECHNOLOGIES CO., LTD
PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
NPN/PNP GENERAL PURPOSE
TRANSISTORS
DESCRIPTION
The UTC
PUMZ1
is a NPN/PNP transistor, specially used in
general purpose of switching and amplifying applications. Thus, two
NPN/PNP transistors are operated independently in an SOT-363
package.
FEATURES
* Low Current: 100mA (MAX.)
* Low Voltage: 40V (MAX.)
* Less Number of Components And Boardspace Required
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
PUMZ1L-AL6-R
PUMZ1G-AL6-R
Package
SOT-363
1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
6
C1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Per Transistor; For The PNP Transistor With Negative Polarity
Collector- Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Total Power Dissipation
P
D
300
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on an FR4 printed-circuit board.
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θ
JA
Note: Device mounted on an FR4 printed-circuit board.
RATINGS
416
UNIT
K/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Per Transistor; For The PNP Transistor With Negative Polarity
V
CB
=30V, I
E
=0
Collect Cut-off Current
I
CBO
V
CB
=30V, I
E
=0, T
J
=150°C
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
h
FE
DC Current Gain
V
CE
=6V, I
C
=1mA
Collector-Emitter Saturation Voltage(Note) V
CE(SAT)
I
C
=50mA, I
B
=5mA
TR1
C
C
Collector Capacitance
I
E
=i
e
=0; V
CB
=12V; f =1MHz
TR2
f
T
Transition Frequency
V
CE
=12V, I
C
=2mA, f =100MHz
Note: Pulse test: t
P
≤
300
μs; δ ≤
0.02.
MIN
TYP
MAX UNIT
100
10
100
120
200
1.5
2.2
100
mV
pF
pF
MHz
nA
μA
nA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-011.b
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