PTFA092213EL
PTFA092213FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092213EL and PTFA092213FL are 220-watt, internally-
matched LDMOS FETs designed for use in cellular power amplifier
applications in the 920 to 960 MHz band. These devices feature
internal I/O matching and thermally-enhanced open-cavity ceramic
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092213EL
Package H-33288-6
Gain (dB) , Drain Efficiency (%)
40
30
20
10
0
-10
-20
-30
30
-20
Gain
Efficiency
IMD_lower
-30
IMD (dBc) , ACPR (dBc)
de
d
-25
co
m
m
en
-35
-40
-45
-50
-55
IMD_upper
35
ACPR
50
re
40
45
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 50 W average, ƒ
1
= 950 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
no
t
fo
r
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz Bandwidth
•
•
•
•
•
•
•
Symbol
G
ps
ne
Two-carrier WCDMA Performance
Features
Broadband internal matching
Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
Typical CW performance, 960 MHz, 30 V
- Output power at P
1dB
= 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
Pb-free, RoHS-compliant
w
Min
—
—
—
de
Typ
17.5
29
–32
si
Max
—
—
—
PTFA092213FL
Package H-34288-4/2
gn
Unit
dB
%
dBc
Rev. 05, 2015-03-04
h
D
IMD
PTFA092213EL
PTFA092213FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Two-tone Measurements
(tested in Infineon test fixture)
Characteristic
Gain
Symbol
G
ps
Min
17
40
—
Typ
17.5
42
Max
—
—
–28
Unit
dB
%
dBc
Drain Efficiency
Intermodulation Distortion
h
D
IMD
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
de
Min
65
—
—
—
2.0
—
si
Typ
—
—
—
0.04
2.5
—
DC Characteristics
gn
65
–30
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1850 mA
V
GS
= 10 V, V
DS
= 0 V
de
d
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
m
en
Maximum Ratings
fo
r
R
DS(on)
V
GS
I
GSS
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
ne
w
Value
Unit
V
V
°C
°C
°C/W
co
m
–0.5 to +12
200
–40 to +150
0.23
Ordering Information
Type and Version
PTFA092213EL V4
PTFA092213EL V4 R250
PTFA092213FL V5
PTFA092213FL V5 R250
no
t
Thermal Resistance (T
CASE
= 70 °C, 220 W CW)
re
Package Outline
H-33288-6
H-33288-6
H-34288-4/2
H-34288-4/2
Package Description
Thermally-enhanced, slotted flange, single-ended
Thermally-enhanced, slotted flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Thermally-enhanced, earless flange, single-ended Tray
Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 05, 2015-03-04
PTFA092213EL
PTFA092213FL
Confidential, Limited Internal Distribution
Typical Performance
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
20
19
18
70
60
21
20
70
Drain Efficiency (%)
Gain (dB)
Gain (dB)
Gain
50
40
30
19
18
17
16
15
14
50
40
30
20
10
0
17
16
15
14
13
35
40
45
50
55
10
0
fo
r
ne
Efficiency
20
Gain
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
m
en
de
d
V
DD
= 30 V, I
DQ
= 1.85 A, P
O UT
= 110 W
50
0
-5
20
19
Drain Efficiency (%), Gain (dB)
re
45
40
35
30
25
20
15
10
Efficiency
co
m
Broadband Two-tone
Gain, Efficiency & Return Loss
vs. Frequency
V
DD
= 30 V, ƒ = 960 MHz
Power Sweep, CW
Return Loss (dB)
no
t
-15
-20
-25
-30
-35
-40
Power Gain (dB)
-10
Return Loss
18
17
16
15
35
I
DQ
= 2.6 A
I
DQ
= 1.85 A
I
DQ
= 1.1 A
Gain
900 910 920 930 940 950 960 970 980 990
40
45
50
55
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 05,
2015-03-04
Drain Efficiency (%)
w
de
si
T
CA S E
= -10°C
T
CA S E
= 25°C
T
CA S E
= 90°C
gn
Efficiency
60
PTFA092213EL
PTFA092213FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Intermodulation Distortion vs.
Output Power
V
DD
= 30 V, I
DQ
= 1.85 A,
ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
IS-95 CDMA Performance
-20
-30
50
-30
gn
de
Adj 750 kHz
Drain Efficiency (%)
IMD (dBc)
-40
-50
-60
-70
35
40
3rd Order
si
5th
40
30
20
10
0
-40
-50
-60
-70
-80
Efficiency
Alt
1
1.98 MHz
7th
fo
r
ne
45
50
55
30
35
Output Power, PEP (dBm)
Output Power (dBm), Avg.
40
45
50
Single-carrier WCDMA Performance
60
co
m
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8.5 dB,
3.84 MHz Bandwidth
Gain (dB), Efficiency (%)
30
20
10
0
30
Gain
-45
-50
Efficiency
-55
-60
35
40
45
50
Output Power (dBm)
Data Sheet
IMD (dBc)
no
t
40
re
50
IMD
m
en
-30
-35
-40
de
d
4 of 10
Rev. 05,
2015-03-04
Adj. Ch. Power Ratio (dBc)
w
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