DISCRETE SEMICONDUCTORS
DATA SHEET
M3D743
BZA900AVL series
Quadruple low capacitance ESD
suppressor
Product data sheet
Supersedes data of 2003 Apr 15
2003 Oct 20
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
FEATURES
•
Low diode capacitance
•
Low leakage current
•
SOT665 surface mount package
•
Common anode configuration.
APPLICATIONS
•
Communication systems
•
Computers and peripherals
•
Audio and video equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA956AVL
BZA962AVL
BZA968AVL
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BZA956AVL
BZA962AVL
BZA968AVL
−
−
−
DESCRIPTION
plastic surface mounted package; 5 leads
plastic surface mounted package; 5 leads
plastic surface mounted package; 5 leads
MARKING CODE
V3
V2
V1
1
2
3
handbook, halfpage
5
BZA900AVL series
PINNING
PIN
1
2
3
4
5
cathode 1
common anode
cathode 2
cathode 3
cathode 4
DESCRIPTION
4
1
3
2
4
5
MGW315
Fig.1 Simplified outline (SOT665) and symbol.
VERSION
SOT665
SOT665
SOT665
2003 Oct 20
2
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
T
stg
T
j
ESD
working current
continuous forward current
non-repetitive peak forward current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge
HBM MIL-Std 883
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
STANDARD
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point; note 1
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
>4 kV
T
amb
= 25
°C
T
amb
= 25
°C
t
p
= 1 ms; square pulse
T
amb
= 25
°C;
note 2; see Fig.5
square pulse; t
p
= 1 ms
PARAMETER
CONDITIONS
BZA900AVL series
MIN.
−
−
−
−
−
−65
−
MAX.
UNIT
note 1
200
3.5
335
6
+150
150
−
−
mA
mA
A
mW
W
°C
°C
kV
kV
IEC 61000-4-2 (contact discharge) 15
10
CONDITIONS
>15 kV (air); >8 kV (contact discharge)
VALUE
370
135
125
UNIT
K/W
K/W
K/W
Note
1. Solder point of common anode (pin 2).
2003 Oct 20
3
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA956AVL
BZA962AVL
BZA968AVL
V
Z
working voltage
BZA956AVL
BZA962AVL
BZA968AVL
r
dif
differential resistance
BZA956AVL
BZA962AVL
BZA968AVL
S
Z
temperature coefficient
BZA956AVL
BZA962AVL
BZA968AVL
C
d
diode capacitance
BZA956AVL
BZA962AVL
BZA968AVL
diode capacitance
BZA956AVL
BZA962AVL
BZA968AVL
I
ZSM
non-repetitive peak reverse current
BZA956AVL
BZA962AVL
BZA968AVL
t
p
= 1 ms; T
amb
= 25
°C
−
−
−
f = 1 MHz; V
R
= 5 V
−
−
−
f = 1 MHz; V
R
= 0
−
−
−
I
Z
= 1 mA
−
−
−
I
Z
= 1 mA
−
−
−
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
I
Z
= 1 mA
5.32
5.89
6.46
−
−
−
CONDITIONS
I
F
= 200 mA
−
MIN.
BZA900AVL series
TYP.
−
−
−
−
5.6
6.2
6.8
−
−
−
1.3
2.4
2.9
22
18
16
12
9
8
−
−
−
MAX.
1.2
200
100
20
5.88
6.51
7.14
200
150
100
−
−
−
28
22
19
17
12
11
0.90
0.85
0.80
UNIT
V
nA
nA
nA
V
V
V
Ω
Ω
Ω
mV/K
mV/K
mV/K
pF
pF
pF
pF
pF
pF
A
A
A
2003 Oct 20
4
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA900AVL series
handbook, halfpage
10
MLE001
10
2
handbook, halfpage
MLE003
IZSM
(A)
PZSM
(W)
BZA956AVL
BZA956AVL
1
10
BZA968AVL
BZA962AVL/BZA968AVL
BZA962AVL
10
−1
10
−2
10
−1
1
tp (ms)
10
1
10
−2
10
−1
1
tp (ms)
10
Fig.3
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
26
Cd
22
MLE002
MGT586
handbook, halfpage
400
(pF)
Ptot
(mW)
300
18
200
BZA956AVL
14
BZA962AVL
100
10
BZA968AVL
6
0
1
2
3
4
VR (V)
5
0
0
50
100
Tamb (
°
C)
150
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2003 Oct 20
5
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