BTA2008W-800D
3Q Hi-Com Triac
14 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable
plastic package. This "series D" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
and logic ICs including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with very sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
•
•
•
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
sp
≤ 111 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
0.25
-
5
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
9
125
0.8
Unit
V
A
°C
A
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SO
T2
23
NXP Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
Min
0.25
0.25
Typ
-
-
Max
5
5
Unit
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 10 V/µs;
gate open circuit
0.5
-
-
A/ms
200
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
T1
T2
G
mb
main terminal 1
main terminal 2
gate
mounting base; connected to
main terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA2008W-800D
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 August 2014
2 / 15
NXP Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
sp
≤ 111 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
6
I
T(RMS)
(A)
4
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
0.8
9
9.9
0.41
100
2
5
0.1
150
125
003aag396
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 1.5 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20ms period
-
-40
-
003aag395
1
I
T(RMS)
(A)
0.8
111°C
0.6
0.4
2
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 111 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of lead
temperature; maximum values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 August 2014
3 / 15
NXP Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
1.0
P
tot
(W)
0.8
003aac118
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
0.6
0.4
0.2
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
12
I
TSM
(A)
8
003aag393
4
I
T
I
TSM
t
1/f
0
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 August 2014
4 / 15
NXP Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
10
3
003aag394
I
T
I
TSM
(A)
10
2
(1)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 August 2014
5 / 15
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