BC817
NPN Silicon Epitaxial Planar
Transistors
For switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the PNP transistors BC807
and BC808 are recommended.
1.Base 2.Emitter
3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
ØJA
T
J
T
S
VALUE
50
45
5
500
200
500
150
- 55 to + 150
UNIT
V
V
V
mA
mW
K/W
℃
℃
Electrical Characteristics at T
a
= 25℃
PARAMETER
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
Current Gain Group
-16
-25
-40
SYMBOL
MIN.
100
160
250
40
-
-
-
-
100
-
TYP.
MAX.
250
400
600
-
100
100
0.7
1.2
-
-
UNIT
h
FE
-
-
at V
CE
= 1 V, I
C
= 500 mA
Collector Base Cutoff Current
at V
CB
= 20 V
Emitter-Base Cutoff Current
at V
EB
= 5 V
Collector Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Voltage
at I
C
= 500 mA, V
CE
= 1 V
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
I
CBO
I
EBO
V
CEsat
V
BE(on)
f
t
C
CBO
-
-
-
-
-
5
nA
nA
V
V
MHz
pF
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1
BC817
NPN Silicon Epitaxial Planar
Transistors
RATINGS AND CHARACTERISTIC CURVES BC817
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2