P-CHANNEL POWER MOSFET
| 参数名称 | 属性值 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 包装说明 | TO-263, 3/2 PIN |
| Reach Compliance Code | compliant |
| 雪崩能效等级(Eas) | 700 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (ID) | 11 A |
| 最大漏源导通电阻 | 0.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 44 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |

| UF9640G-TQ2-T | UF9640G-TF3-T | UF9640G-TN3-R | UF9640G-TQ2-R | UF9640L-TN3-R | UF9640L-TQ2-R | UF9640L-TQ2-T | UF9640_15 | UF9640L-TA3-T | UF9640L-TF3-T | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET | 11 Amps, 200 Volts P-CHANNEL POWER MOSFET | P-CHANNEL POWER MOSFET |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| 包装说明 | TO-263, 3/2 PIN | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | TO-263, 3/2 PIN | SMALL OUTLINE, R-PSSO-G2 | TO-263, 3/2 PIN | TO-263, 3/2 PIN | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compli | compliant | compliant | compliant | compliant | compliant | - | compli | compli |
| 雪崩能效等级(Eas) | 700 mJ | 700 mJ | 700 mJ | 700 mJ | 700 mJ | 700 mJ | 700 mJ | - | 700 mJ | 700 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | - | 200 V | 200 V |
| 最大漏极电流 (ID) | 11 A | 11 A | 11 A | 11 A | 11 A | 11 A | 11 A | - | 11 A | 11 A |
| 最大漏源导通电阻 | 0.5 Ω | 0.5 Ω | 0.5 Ω | 0.5 Ω | 0.5 Ω | 0.5 Ω | 0.5 Ω | - | 0.5 Ω | 0.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-220AB | TO-252 | TO-263AB | TO-252 | TO-263AB | TO-263AB | - | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | - | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 2 | 2 | 2 | 2 | - | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | - | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 44 A | 44 A | 44 A | 44 A | 44 A | 44 A | 44 A | - | 44 A | 44 A |
| 表面贴装 | YES | NO | YES | YES | YES | YES | YES | - | NO | NO |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved