PESD5V0U1UA;
PESD5V0U1UB; PESD5V0U1UL
Ultra low capacitance unidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD5V0U1UA
PESD5V0U1UB
PESD5V0U1UL
SOD323
SOD523
SOD882
JEITA
SC-76
SC-79
-
very small
ultra small and flat lead
leadless ultra small
Package configuration
Type number
1.2 Features
I
Unidirectional ESD protection of one line
I
ESD protection up to 9 kV
I
Ultra low diode capacitance: C
d
= 2 pF
I
IEC 61000-4-2; level 4 (ESD)
I
Very low leakage current: I
RM
= 1 nA
I
AEC-Q101 qualified
1.3 Applications
I
I
I
I
I
USB interfaces
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
Subscriber Identity Module (SIM) card
protection
I
I
I
I
I
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
Conditions
Min
-
Typ
-
Max
5
Unit
V
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
Table 2.
Quick reference data
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
C
d
Parameter
diode capacitance
Conditions
f = 1 MHz
V
R
= 0 V
V
R
= 5 V
-
-
2
1.7
2.6
2.3
pF
pF
Min
Typ
Max
Unit
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
PESD5V0U1UA; PESD5V0U1UB
1
001aab540
2
1
2
006aaa152
PESD5V0U1UL
1
2
cathode
anode
[1]
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0U1UA
PESD5V0U1UB
PESD5V0U1UL
SC-76
SC-79
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD323
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
C7
LA
L1
Type number
PESD5V0U1UA
PESD5V0U1UB
PESD5V0U1UL
PESD5V0U1UA_UB_UL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
2 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
Max
9
10
Unit
kV
kV
Table 8.
Standard
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
PESD5V0U1UA_UB_UL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
3 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
V
RWM
= 5 V
I
R
= 5 mA
f = 1 MHz
V
R
= 0 V
V
R
= 5 V
r
dif
differential resistance
I
R
= 1 mA
-
-
-
2
1.7
-
2.6
2.3
100
pF
pF
Ω
Conditions
Min
-
-
5.8
Typ
-
1
6.8
Max
5
100
8.8
Unit
V
nA
V
I
2.0
C
d
(pF)
1.9
−V
CL
−V
BR
−V
RWM
1.8
−I
RM
−I
R
−
1.7
P-N
006aab348
V
+
1.6
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa407
f = 1 MHz; T
amb
= 25
°C
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
Fig 3.
V-I characteristics for a unidirectional
ESD protection diode
PESD5V0U1UA_UB_UL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
4 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
ESD TESTER
RZ
450
Ω
RG 223/U
50
Ω
coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50
Ω
CZ
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 100 ns/div
unclamped
−8
kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped
−8
kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab350
Fig 4.
ESD clamping test setup and waveforms
PESD5V0U1UA_UB_UL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
5 of 12
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