UNISONIC TECHNOLOGIES CO., LTD
80N08
80A, 80V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
80N08
is an N-channel MOSFET using UTC
advanced technology. It can be used in applications, such as
power supply (secondary synchronous rectification), industrial
and primary switch etc.
FEATURES
SYMBOL
* Trench FET Power MOSFETS Technology
ORDERING INFORMATION
Package
TO-247
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
80N08L-T47-T
80N08G-T47-T
80N08L-TA3-T
80N08G-TA3-T
80N08L-TQ2-T
80N08G-TQ2-T
80N08L-TQ2-R
80N08G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-468.F
80N08
MARKING INFORMATION
PACKAGE
MARKING
Power MOSFET
TO-247
TO-220
TO-263
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-468.F
80N08
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
80
A
Pulsed Drain Current
I
DM
320
A
Avalanche Energy, Single Pulse
E
AS
810
mJ
TO-247
300
W
Power Dissipation
P
D
TO-220/TO-263
250
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
L=0.1mH, I
AS
=80A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
30
62
0.42
0.5
UNIT
°C/W
°C/W
PARAMETER
TO-247
Junction to Ambient
TO-220/TO-263
TO-247
Junction to Case
TO-220/TO-263
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
MIN
80
0.01
±1
2.1
3.0
1
±100
4.0
12
TYP
MAX
UNIT
V
µA
nA
V
mΩ
pF
pF
pF
180
37
116
nC
nC
nC
ns
ns
ns
ns
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=1mA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=80V, V
GS
=0V, T
J
=25°C
Gate-Source Leakage Current
I
GSS
V
DS
=0V, V
GS
=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=80A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=40V, R
G
=2.2Ω
I
D
=80A, V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
I
S
Current
Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=80A
Reverse Recovery Time
t
RR
I
F
= I
S
, dI
F
/dt=100A/µs
V
R
=40V
Reverse Recovery Charge
Q
RR
Note: 1. Defined by design. Not subject to production test.
2. Qualified at -20V and +20V.
4700
1260
580
144
25
69
26
50
61
30
80
0.9
110
470
320
1.3
140
590
A
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-468.F
80N08
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
0
20
40
60
80
100
120
200
150
100
50
0
0
300
Drain Current, I
D
(µA)
250
200
150
100
50
0
0.5
1
1.5
2
2.5
3
Drain-Source Breakdown Voltage, BV
DSS
(V)
Drain-Source On-State Resistance
Characteristics
20
18
Drain Current, I
D
(A)
16
14
12
10
8
6
4
2
0
0
50
100
150
200
250
300
Drain to Source Voltage, V
DS
(mV)
0
0
Drain Current, I
D
(A)
Gate Threshold Voltage, V
TH
(V)
Drain Current vs. Source to Drain Voltage
12
10
8
6
4
2
V
GS
=10V, I
D
=20A
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-468.F
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