UNISONIC TECHNOLOGIES CO., LTD
70N06
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
70N06
is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.
FEATURES
* R
DS(ON)
< 15mΩ@V
GS
= 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
70N06L-TA3-T
70N06G-TA3-T
TO-220
70N06L-TF3-T
70N06G-TF3-T
TO-220F
70N06L-TF2-T
70N06G-TF2-T
TO-220F2
70N06L-T2Q-T
70N06G-T2Q-T
TO-262
70N06L-TQ2-T
70N06G-TQ2-T
TO-263
70N06L-TQ2-R
70N06G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-089.D
70N06
MARKING
Power MOSFET
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QW-R502-089.D
70N06
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
T
C
= 25°C
70
A
Continuous Drain Current
I
D
T
C
= 100°C
56
A
Drain Current Pulsed (Note 2)
I
DM
280
A
600
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
10
V/ns
TO-220/TO-262/TO-263
104
W
Power Dissipation
TO-220F
P
D
36
W
TO-220F2
38
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.24mH, I
AS
=70A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
4. I
SD
≤48A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62
1.2
3.47
3.28
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-262
TO-263
Junction to Case
TO-220F
TO-220F2
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QW-R502-089.D
70N06
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250
μA
60
Drain-Source Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
Forward
V
GS
= 20V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
Breakdown Voltage Temperature
△
BV
DSS
/△T
J
I
D
= 1mA, Referenced to 25°C
0.08
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 35 A
DYNAMIC CHARACTERISTICS
1800
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V
Output Capacitance
C
OSS
800
f = 1MHz
Reverse Transfer Capacitance
C
RSS
130
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
90
Turn-On Rise Time
t
R
350
V
DD
= 30V, V
GS
=10V,I
D
=1 A
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
260
Turn-Off Fall Time
t
F
260
Total Gate Charge
Q
G
210
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
50
I
D
= 48A (Note 1, 2)
Gate-Drain Charge (Miller Charge)
Q
GD
120
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 70A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
90
V
GS
= 0 V, I
S
= 70A
dI
F
/ dt = 100 A/μs
Reverse Recovery Charge
Q
RR
300
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
MAX UNIT
V
μA
nA
nA
V/°C
4.0
15
2000
900
150
120
400
300
300
250
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
280
ns
μC
1
100
-100
1.4
70
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QW-R502-089.D
70N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-089.D
NXP MCU
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