UNISONIC TECHNOLOGIES CO., LTD
50N06
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
Power MOSFET
1
TO-263
TO-251
DESCRIPTION
The UTC
50N06
is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
1
TO-220
1
TO-220F
FEATURES
* R
DS(ON)
< 23mΩ@V
GS
= 10 V
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
1
TO-220F3
1
TO-252
SYMBOL
2.Drain
1
TO-252D
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F3
TO-251
TO-252
TO-252D
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
50N06L-TA3-T
50N06G-TA3-T
50N06L-TF3-T
50N06G-TF3-T
50N06L-TF3T-T
50N06G-TF3T-T
50N60L-TM3-T
50N60G-TM3-T
50N06L-TN3-R
50N06G-TN3-R
50N06L-TND-R
50N06G-TND-R
50N06L-TQ2-T
50N06G-TQ2-T
50N06L-TQ2-R
50N06G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-088.H
50N06
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F3
TO-251
TO-252
TO-252D
TO-263
MARKING
Power MOSFET
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QW-R502-088.H
50N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
T
C
= 25°C
T
C
= 100°C
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-263
TO-220F/TO-220F3
Power Dissipation (T
C
=25°C)
P
D
TO-251/TO-252
46
W
TO-252D
Junction Temperature
T
J
+150
°C
Operation and Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by T
J
3. L=0.38mH, I
AS
=50A, V
DD
= 25V, R
G
=20Ω, Starting T
J
=25°C
4. I
SD
≤50A,
di/dt
≤300A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
RATINGS
60
±20
50
35
200
480
13
7
120
70
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F3/TO-263
TO-251/TO-252
TO-252D
TO-220
TO-220F/TO-220F3
TO-251/TO-252
TO-252D
TO-263
SYMBOL
θ
JA
100
1.24
1.78
θ
JC
2.7
1.24
°C/W
°C/W
°C/W
°C/W
°C/W
RATING
62
UNIT
°C/W
Junction to Ambient
Junction to Case
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3 of 9
QW-R502-088.H
50N06
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Power MOSFET
MIN
60
TYP MAX UNIT
V
μA
nA
nA
V/°C
4.0
23
1220
550
100
80
220
350
250
80
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 25 A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
=0.5 A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, V
GS
= 10 V
Gate-Source Charge
Q
GS
I
D
= 1.3A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
I
S
= 50A, V
GS
= 0 V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
I = 250
μA,
△
BV
DSS
/△T
J D
Referenced to 25°C
10
100
-100
0.07
2.0
18
900
430
80
60
180
300
200
60
9
20
1.5
50
200
54
81
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4 of 9
QW-R502-088.H
50N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-088.H
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