UNISONIC TECHNOLOGIES CO., LTD
19N10
15.6A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse. They are suited for low voltage
applications such as audio amplifier, high efficiency switching
DC/DC converters, and DC motor control.
FEATURES
* R
DS(ON)
< 0.1Ω
@
V
GS
=10V, I
D
=7.8A
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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19N10
ORDERING INFORMATION
Package
TO-3P
TO-220
TO-220F
TO-220F1
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-263
TO-263
Ordering Number
Lead Free
Halogen Free
19N10L-T3P-T
19N10G-T3P-T
19N10L-TA3-T
19N10G-TA3-T
19N10L-TF3-T
19N10G-TF3-T
19N10L-TF1-T
19N10G-TF1-T
19N10L-TM3-T
19N10G-TM3-T
19N10L-TMS-T
19N10G-TMS-T
19N10L-TMS2-T
19N10G-TMS2-T
19N10L-TMS4-T
19N10G-TMS4-T
19N10L-TN3-R
19N10G-TN3-R
19N10L-TQ2-R
19N10G-TQ2-R
19N10L-TQ2-T
19N10G-TQ2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
MARKING
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ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
± 25
V
T
C
=25°C
15.6
A
Continuous Drain Current
I
D
T
C
=100°C
9.8
A
Pulsed Drain Current (Note 2)
I
DM
62.4
A
Avalanche Current (Note 2)
I
AR
15.6
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
220
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.0
V/ns
TO-220/TO-263
62.5
W
TO-220F/TO-220F1
38
W
TO-251/TO-251S
Power Dissipation
P
D
TO-251S2/TO-251S4
50
W
TO-252
TO-3P
178
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L=1.8mH, I
AS
=15.6A, V
DD
=25V, R
G
=25
Ω,
Starting T
J
=25°C
4. I
SD
≤19A,
di/dt
≤
300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
50
40
2.0
3.95
θ
JC
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-263
TO-251/TO-251S
Junction to Ambient
TO-251S2/TO-251S4
TO-252
TO-3P
TO-220/TO-263
TO-220F/TO-220F1
TO-251/TO-251S
Junction to Case
TO-251S2/TO-251S4
TO-252
TO-3P
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ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
100
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Power MOSFET
TYP
MAX UNIT
V
V
GS
=0V, I
D
=250µA
I
D
=250µA,
∆BV
DSS
/∆T
J
Referenced to 25°C
V
DS
=100V, V
GS
=0V
I
DSS
V
DS
=100V, T
J
=125°C
V
GS
=25V, V
DS
=0V
I
GSS
V
GS
=-25V, V
DS
=0V
0.1
1
10
100
-100
2.0
0.078
4.0
0.1
11
780
215
40
25
V/°C
µA
µA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
nC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.8A
Forward Transconductance
g
FS
V
DS
=40V, I
D
=7.8A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, V
GS
=10V
Gate Source Charge
Q
GS
(Note 1, 2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=15.6A
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
=19A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle≤ 2%
Note:
2. Essentially independent of operating temperature
600
165
32
19
6
6
45
70
165
78
60
90
250
90
1.5
15.6
62.4
78
200
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TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-261.J
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