UNISONIC TECHNOLOGIES CO., LTD
1N90
1 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
1N90
is an N-channel mode power MOSFET, using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology specializes in allowing a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC
1N90
is universally applied in high efficiency switch mode
power supply.
Power MOSFET
FEATURES
* R
DS(on)
< 16Ω @ V
GS
=10V, I
D
= 0.5A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
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QW-R502-496.E
1N90
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
1N90L-TA3-T
1N90G-TA3-T
1N90L-TF3-T
1N90G-TF3-T
1N90L-TF1-T
1N90G-TF1-T
1N90L-TF2-T
1N90G-TF2-T
1N90L-TF3-T
1N90G-TF3-T
1N90L-TM3-T
1N90G-TM3-T
1N90L-TMS-T
1N90G-TMS-T
1N90L-TMS2-T
1N90G-TMS2-T
1N90L-TMS4-T
1N90G-TMS4-T
1N90L-TN3-R
1N90G-TN3-R
1N90L-TND-R
1N90G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
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QW-R502-496.E
1N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
W
°C
°C
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V
DSS
900
Gate-Source Voltage
V
GSS
±30
Continuous
I
D
1.0
Drain Current
Pulsed (Note 2)
I
DM
4.0
Avalanche Current (Note 2)
I
AR
1.0
90
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
TO-220
40
TO-220F/TO-220F1
23
TO-220F3
Power Dissipation
P
D
TO-220F2
24
TO-251/TO-251S
TO-251S2/TO-251S4
28
TO-252/TO-252D
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=170mH, I
AS
=1.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
62.5
θ
JA
110
3.13
5.35
θ
JC
5.3
4.53
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
°C/W
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R502-496.E
1N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN
900
TYP
MAX
UNIT
V
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=0.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=1.0A, R
G
=25Ω
(Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=120V, V
GS
=10V, I
D
=1.0A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=1.0A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=1.0A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature.
1.0
10
100
100
-100
3.0
12
0.75
200
22
5
37
10
50
26
25
3
4
5.0
16
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
250
26
7
45
40
60
60
35
1.0
4.0
1.4
300
0.6
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QW-R502-496.E
1N90
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-496.E
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