UNISONIC TECHNOLOGIES CO., LTD
1N70
1.2A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N70
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 13.5Ω @ V
GS
= 10V, I
D
= 0.6A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-251
TO-251L
TO-252
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Box
Bulk
Ordering Number
Lead Free
Halogen Free
1N70L-TM3-T
1N70G-TM3-T
1N70L-TMA-T
1N70G-TMA-T
1N70L-TN3-R
1N70G-TN3-R
1N70L-T92-B
1N70G-T92-B
1N70L-T92-K
1N70G-T92-K
Note: Pin Assignment: G: Gate D: Drain
S: Source
1N70L-TM3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) TM3: TO-251, TMA: TO-251L, TN3: TO-252,
T92: TO-92
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-251 / TO-251L / TO-252
TO-92
UTC
1N70
1
L: Lead Free
G: Halogen Free
Data Code
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1 of 8
QW-R502-171.E
1N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
RATINGS
700
±30
1.2
1.2
4.8
50
4.0
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy (Note 2)
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt (Note 3)
TO-251/TO-251L
28
W
TO-252
Power Dissipation
P
D
TO-92
1.6
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
TO-251/TO-251L
TO-252
TO-92
TO-251/TO-251L
TO-252
TO-92
θ
JA
RATINGS
110
140
θ
JC
4.53
79
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
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QW-R502-171.E
1N70
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
700
V
10
μA
100 nA
-100 nA
V/°C
4.0
13.5
220
35
25
45
60
80
45
18
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0V, I
D
= 250μA
V
DS
= 700V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
= 250μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A
Gate-Source Charge
Q
GS
(Note 2,3)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
= 1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
0.4
2.0
9.3
190
25
20
33
45
62
31
12
3.5
2.2
1.4
1.2
4.8
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-171.E
1N70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-171.E
1N70
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-171.E
嵌入式系统
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