UNISONIC TECHNOLOGIES CO., LTD
1N60Z
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N60Z
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<11.5Ω@ V
GS
=10V, I
D
=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
SOT-223
TO-92
TO-92
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
Ordering Number
Lead Free
Halogen Free
-
1N60ZG-AA3-R
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-TN3-R
1N60ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-724.D
1N60Z
MARKING
PACKAGE
MARKING
Power MOSFET
SOT-223
TO-252
TO-92
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QW-R502-724.D
1N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
0.8
Power Dissipation (T
A
=25°C)
P
D
TO-252
1.5
W
TO-92
1
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
SOT-223
TO-252
TO-92
θ
JA
RATINGS
150
100
140
UNIT
°C/W
Junction to Ambient
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QW-R502-724.D
1N60Z
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN
600
TYP MAX UNIT
V
μA
μA
μA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
Forward
V
GS
=20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
(Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=1.2A (Note 2,3)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
10
+5
-5
0.4
2.0
9.3
120
20
3.0
5
25
7
25
5.0
1.0
2.6
4.0
11.5
150
25
4.0
20
60
25
60
6.0
1.4
1.2
4.8
160
0.3
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QW-R502-724.D
1N60Z
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-724.D
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