UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N60A
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<15Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C
RSS
= 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
1N60AL-AA3-R
1N60AG-AA3-R
SOT-223
1N60AL-TM3-T
1N60AG-TM3-T
TO-251
1N60AL-TN3-R
1N60AG-TN3-R
TO-252
1N60AL-T92-B
1N60AG-T92-B
TO-92
1N60AL-T92-K
1N60AG-T92-K
TO-92
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-091.K
1N60A
MARKING INFORMATION
PACKAGE
1N60A
Power MOSFET
MARKING
L: Lead Free
G: Halogen Free
Data Code
1
SOT-223
TO-251
TO-252
TO-92
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QW-R502-091.K
1N60A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
0.5
A
Pulsed Drain Current (Note 2)
I
DM
2
A
Single Pulse(Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive(Note 2)
E
AR
3.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
6.25
SOT-223
W
Power Dissipation (T
C
=25°C) TO-251/TO-252
34
TO-92
3
P
D
SOT-223
0.05
Derate above 25°C
TO-251/TO-252
0.27
W/°C
TO-92
0.025
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, I
AS
=0.8A, V
DD
=50V, R
G
=0Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt≤100A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
150
110
160
20
5
80
UNIT
°C/W
PARAMETER
SOT-223
Junction to Ambient
TO-251/TO-252
TO-92
SOT-223
Junction to Case
TO-251/TO-252
TO-92
θ
JC
°C/W
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QW-R502-091.K
1N60A
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250μA
Drain-Source Leakage Current (T
J
=25°C)
V
DS
= 600V, V
GS
= 0V
I
DSS
Drain-Source Leakage Current (T
J
=125°C)
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature
I
D
= 250μA
△
BV
DSS
/
△
T
J
Coefficient
referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=0.5A, R
G
=5Ω
(Note 1,2)
Turn-Off Delay Time
t
D (OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=0.8A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
SD
= 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
Power MOSFET
MIN
600
TYP MAX UNIT
V
10
10
100
-100
0.4
μA
nA
nA
V/°C
4.5
15
100
20
3
12
11
40
18
8
1.8
4.0
34
32
90
46
10
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
2.0
11
1.6
1.2
4.8
136
0.3
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QW-R502-091.K
1N60A
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-091.K
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