UNISONIC TECHNOLOGIES CO., LTD
1N50Z
1.3A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N50Z
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
1N50Z
is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
Power MOSFET
FEATURES
* R
DS(ON)
< 6.0Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50ZL-T92-B
1N50ZG-T92-B
1N50ZL-T92-K
1N50ZG-T92-K
1N50ZL-TN3-R
1N50ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-92
TO-92
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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1N50Z
MARKING
TO-252
TO-92
Power MOSFET
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1N50Z
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±20
V
Continuous (T
C
=25°C)
I
D
1.3 (Note 2)
A
Drain Current
Pulsed (Note 3)
I
DM
5 (Note 2)
A
Avalanche Current (Note 3)
I
AR
1.3
A
Single Pulsed (Note 4)
E
AS
113
mJ
Avalanche Energy
Repetitive (Note 5)
E
AR
2.6
mJ
TO-92
40
Power Dissipation
W
TO-252
45
P
D
TO-92
0.32
Derate above 25°C
W/°C
TO-252
0.36
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. I
SD
≤
1.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-92
Junction to Ambient
TO-252
TO-92
Junction to Case
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
160
110
80
4.53
UNIT
°C/W
°C/W
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1N50Z
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=1.3A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=1.5A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
1
+5
-5
2.0
4.6
220
30
11
12.5
3.2
2.7
20
40
70
48
4.0
6.0
290
35
13
16
V
µA
µA
µA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
35
50
90
60
1.3
5
1.15
130
0.32
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1N50Z
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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