UNISONIC TECHNOLOGIES CO., LTD
15N60
15A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
15N60
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
15N60
is universally applied in active power factor
correction and high efficient switched mode power supplies.
FEATURES
* R
DS(ON)
< 0.65Ω @ V
GS
=10V, I
D
=7.5A
* High switching speed
* Improved dv/dt capability
SYMBOL
RDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
15N60L-TF1-T
15N60G-TF1-T
15N60L-TF1-T
15N60G-TF1-T
15N60L-TF2-T
15N60G-TF2-T
15N60L-T47-T
15N60G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-485.G
15N60
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
600
V
Gate to Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
15
A
Continuous
I
D
15
A
Continuous Drain Current
60
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
420
mJ
Avalanche Energy
25.0
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
147
TO-220F1
38.5
Power Dissipation
P
D
W
TO-220F2
52
TO-247
312
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=5.23mH, I
AS
=15A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤15A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL RESISTANCES CHARACTERISTICS
SYMBOL
θ
JA
RATINGS
62.5
40
0.85
3.3
2.4
0.4
UNIT
°C/W
PARAMETER
TO-220/TO-220F1
TO-220F2
Junction to Ambient
TO-247
TO-220
TO-220F1
Junction to Case
TO-220F2
TO-247
θ
JC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-485.G
15N60
ELECTRICAL CHARACTERISTICS
(T
C
=25°C,
unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Power MOSFET
MIN TYP MAX UNIT
BV
DSS
V
GS
=0V, I
D
=250µA, T
J
=25°C
600
V
∆BV
DSS
/∆T
J
I
D
=250μA,Referenced to 25°C
0.65
V/°C
V
DS
=600V, V
GS
=0V
1
µA
I
DSS
10
µA
V
DS
=520V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
+100 nA
I
GSS
-100 nA
V
GS
=-30V, V
DS
=0V
2.0
4.0
0.45 0.65
2400 3095
270 385
25 35.5
100
200
500
210
270
25
51
140
260
550
250
300
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=325V, I
D
=15A,
R
G
=21.7Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=15A (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=15A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=15A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3. Drain current limited by maximum junction temperature
15
60
1.4
496
5.69
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-485.G
15N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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4 of 6
QW-R502-485.G
15N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-485.G
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