UNISONIC TECHNOLOGIES CO., LTD
11N90
11 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
11N90
is an N-channel enhancement mode Power FET
using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
11N90
is universally applied in high efficiency switch
mode power supply,
FEATURES
* R
DS(on)
< 1.1Ω @ V
GS
= 10V, I
D
= 5.5A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
11N90L-TA3-T
11N90G-TA3-T
TO-220
11N90L-TF1-T
11N90G-TF1-T
TO-220F1
11N90L-TF2-T
11N90G-TF2-T
TO-220F2
TO-3P
11N90L-T3P-T
11N90G-T3P-T
TO-3PN
11N90L-T3N-T
11N90G-T3N-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
11N90L-TA3-T
(1) Packing Type
(2) Package Type
(3) Green Package
(1) T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
T3P: TO-3P, T3N: TO-3PN
(3) L: Lead Free, G: Halogen Free and Lead Free
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QW-R502-497.E
11N90
MARKING
Power MOSFET
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QW-R502-497.E
11N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
RATINGS
UNIT
Drain-Source Voltage
900
V
Gate-Source Voltage
±30
V
Continuous
11
A
Drain Current
Pulsed (Note 1)
44
A
Avalanche Energy
Single Pulsed (Note 2)
1000
mJ
Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
TO-220
160
W
Power Dissipation
TO-220F1/TO-220F2
P
D
50
W
TO-3P/TO-3PN
215
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220/TO-220F1
TO-220F2
TO-3P/TO-3PN
TO-220
TO-220F1/TO-220F2
TO-3P/TO-3PN
SYMBOL
θ
JA
RATINGS
62.5
40
0.78
2.48
0.58
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θ
JC
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QW-R502-497.E
11N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Power MOSFET
MIN
900
TYP MAX UNIT
V
1.0
10
100
100
-100
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
I
DSS
I
GSS
V
DS
=900V, V
GS
=0V
V
DS
=720V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
3.0
0.91
980
170
18
60
14
22
125
260
340
220
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 4, 5)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
(Note1)
Drain-Source Diode Forward Voltage
V
SD
I
S
=11A, V
GS
=0V
(Note 4)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L = 15mH, I
AS
= 11A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
11.0A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
5.0
1.1
1380
280
25
80
140
320
380
270
11
44
1.4
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QW-R502-497.E
11N90
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
V
GS
Power MOSFET
Gate Charge Waveforms
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
G
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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