UNISONIC TECHNOLOGIES CO., LTD
11N50
Preliminary
Power MOSFET
11A, 500V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The
UTC 11N50
is an N-channel enhancement mode power
MOSFET. It uses UTC advanced planar stripe, DMOS technology to
provide customers perfect switching performance, minimal on-state
resistance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The
UTC 11N50
is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
1
TO-220F
FEATURES
* R
DS(ON)
=0.55Ω @ V
GS
=10V
* Fast Switching
* With 100% Avalanche Tested
1
TO-220F1
SYMBOL
2.Drain
1
TO-262
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50L-TA3-T
11N50G-TA3-T
11N50L-TF1-T
11N50G-TF1-T
11N50L-TF3-T
11N50G-TF3-T
11N50L-T2Q-T
11N50G-T2Q-T
Package
TO-220
TO-220F1
TO-220F
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-462.d
11N50
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
RATINGS
UNIT
500
V
±30
V
T
C
=25°C
11 (Note 2)
A
I
D
Continuous Drain Current
T
C
=100°C
7 (Note 2)
A
Pulsed Drain Current (Note 3)
I
DM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
E
AS
670
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
195
TO-220F1
40
T
C
=25°C
W
TO-220F
48
TO-262
195
Power Dissipation
P
D
TO-220
1.56
0.32
Derate above TO-220F1
W/°C
25°C
TO-220F
0.39
TO-262
1.56
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, I
AS
=11A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
5. I
SD
≤11A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
SYMBOL
V
DSS
V
GSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
TO-220F
TO-262
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.64
3.1
2.58
0.64
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-462.d
11N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=500V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, T
J
=125°C
Gate-Source Leakage Current
I
GSS
V
DS
=0V ,V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=400V, V
GS
=10V, I
D
=11A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=250V, I
D
=11A, R
G
=3Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=11A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=11A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN
500
0.5
TYP MAX UNIT
V
V/°C
10
µA
100
µA
±100 nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
2.0
4.0
0.48 0.55
1515 2055
185 235
25
30
43
8
19
24
70
120
75
55
57
150
250
160
11
44
1.4
90
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-462.d
11N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-462.d
11N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-462.d
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