UNISONIC TECHNOLOGIES CO., LTD
UF520
Preliminary
Power MOSFET
9.2A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UF520
is an N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
high Input Impedance and high switching speed.
This UTC
UF520
is suitable for motor drivers, switching
convertors, switching regulators, relay drivers and drivers for high
power bipolar switching transistors.
FEATURES
* R
DS(ON)
=0.25Ω @ V
GS
=10V,I
D
=5.6A
* High Input Impedance
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF520L-TA3-T
UF520G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-659.a
UF520
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
RATINGS
UNIT
100
V
±20
V
T
C
=25°C
9.2
A
I
D
Continuous
Drain Current
T
C
=100°C
6.5
A
Pulsed (Note 2)
I
DM
37
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
36
mJ
Power Dissipation
P
D
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve
3. V
DD
=25V, starting T
J
=25°C, L=640mH, R
G
=25Ω, peak I
AS
=9.2A
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
80
2.5
UNIT
°C/W
°C/W
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QW-R502-659.a
UF520
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=95V, V
GS
=0V
Gate- Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.6A (Note 1)
On State Drain Current (Note 1)
I
D(ON)
V
GS
=10V, V
DS
>I
D(ON)
×R
DS(ON)
MAX
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, I
D
=9.2A, V
DS
=0.8*Rated
Gate to Source Charge
Q
GS
BV
DSS
, I
G(REF)
=1.5mA (Note 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=50V, I
D
≈9.2A,
R
G
=18Ω,
R
L
=5.5
Ω
(Note 3)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2%
2. Gate Charge is Essentially Independent of Operating Temperature
3. MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
100
V
250 µA
±100 nA
4.0
0.25 0.27
V
Ω
A
pF
pF
pF
30
nC
nC
nC
ns
ns
ns
ns
2.0
9.2
350
130
25
10
2.5
2.5
9
30
18
20
13
63
70
59
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
V
SD
T
J
=25°C,I
SD
=9.2A,V
GS
=0V (Note 1)
2.5
V
Continuous Source to Drain Current
I
SD
9.2
A
Note 3
Pulse Source to Drain Current (Note 2)
I
SDM
37
A
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance
curve
3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-659.a
UF520
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-659.a
UF520
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-659.a
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