UNISONIC TECHNOLOGIES CO., LTD
UF4N20Z
4A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UF4N20Z
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
FEATURES
* R
DS(ON)
< 2Ω @ V
GS
=10V, I
D
=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Package
SOT-223
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
-
UF4N20ZG-AA3-R
UF4N20ZL-TA3-R
UF4N20ZG-TA3-R
UF4N20ZL-TN3-R
UF4N20ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
SOT-223
TO-220 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-753.F
UF4N20Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DSS
V
GSS
I
D
I
AR
E
AS
E
AR
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Avalanche Current
RATINGS
UNIT
200
V
±20
V
4
A
4
A
Single Pulsed
52
mJ
Avalanche Energy
Repetitive
52
mJ
SOT-223
0.8
Power Dissipation
TO-220
P
D
40
W
TO-252
1.14
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
200
1
10
-10
2
0
4
2
30
850
250
200
3.2
0.64
1.6
6
38
11
13
4
16
1.48
V
µA
µA
µA
V
Ω
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
DS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=200V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
On State Drain Current
I
D(ON)
V
GS
=10V, V
DS
=10V, f=1MHz
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=50V, I
D
=4A, I
G
=100µA,
Gate to Source Charge
Q
GS
V
GS
=10V
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=4A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A
0.1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-753.F
UF4N20Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
300
250
200
150
100
50
0
0
50
150
200
250
100
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.7
4.2
1.4 2.1
2.8 3.5
Gate Threshold Voltage, V
TH
(V)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
3 of 3
QW-R502-753.E
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