UNISONIC TECHNOLOGIES CO., LTD
8N65
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
8N65
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 1.4Ω@V
GS
= 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
8N65L-TA3-T
8N65G-TA3-T
8N65L-TF3-T
8N65G-TF3-T
8N65L-TF1-T
8N65G-TF1-T
8N65L-TF3T-T
8N65G-TF3T-T
8N65L-T2Q-T
8N65G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-591.D
8N65
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
MARKING
Power MOSFET
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QW-R502-591.D
8N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
8
A
8
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
32
A
230
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
147
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
TO-220F3
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=7.1mH, I
AS
=8A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤8A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F3
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QW-R502-591.D
8N65
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
650
V
V
DS
= 650 V, V
GS
= 0 V
10
µA
100 nA
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 4A
1.2 1.4
Ω
DYNAMIC CHARACTERISTICS
1145 1255 pF
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
118 135 pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
19
25
pF
SWITCHING CHARACTERISTICS
84 100 ns
Turn-On Delay Time
t
D(ON)
V
DD
= 325V, I
D
=8A,
Turn-On Rise Time
t
R
100 130 ns
R
G
= 25Ω
Turn-Off Delay Time
t
D(OFF)
275 320 ns
(Note 1, 2)
Turn-Off Fall Time
t
F
64.5 140 ns
Total Gate Charge
Q
G
115 130 nC
V
DS
= 520V,I
D
=8A,
Gate-Source Charge
Q
GS
12
nC
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
40
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=8A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
8
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
32
A
Forward Current
365
ns
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
=8A,
dI
F
/dt = 100 A/µs (Note 2)
Reverse Recovery Charge
Q
RR
3.4
µC
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R502-591.D
8N65
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-591.D
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