UNISONIC TECHNOLOGIES CO., LTD
25N40
Preliminary
Power MOSFET
400V, 26A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
25N40
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
25N40
is generally applied in high efficiency switch
mode power supplies.
FEATURES
* R
DS(ON)
=0.16Ω @ V
GS
=10V,I
D
=13A
* Low Gate Charge (Typical 48nC)
* Low C
RSS
(Typical 30pF)
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N40L-T47-T
25N40G-T47-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-621.b
25N40
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified) (Note 5)
RATINGS
UNIT
400
V
±30
V
T
C
=25°C
26
A
I
D
Continuous
Drain Current (Note 5)
T
C
=100°C
15.6
A
Pulsed (Note 2)
I
DM
104
A
Avalanche Current (Note 2)
I
AR
26
A
Single Pulsed (Note 3)
E
AS
1352
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
26.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
297
W
P
D
Derate above 25°C
2.4
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=4mH, I
AS
=26A. V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤26A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
40
0.42
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-621.b
25N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V, T
J
=150°C
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V,
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V , V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=13A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=320V, V
GS
=10V, I
D
=26A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain ("Miller") Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=200V, I
D
=26A, R
G
=25Ω
Rise Time
t
R
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=26A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
SD
=26A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
MIN TYP MAX UNIT
400
V
0.5
V/°C
1
µA
+100 nA
-100 nA
4.0
0.11 0.16
2400 3185
390 520
30
45
48
15
20
45
100
115
66
60
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
2.0
100
210
240
140
26
104
1.4
406
5.17
UNISONIC TECHNOLOGIES CO., LTD
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3 of 6
QW-R502-621.b
25N40
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-621.b
25N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-621.b
FPGA/CPLD
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