N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
雪崩能效等级(Eas) | 1200 mJ |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V |
最大漏极电流 (Abs) (ID) | 20 A |
最大漏极电流 (ID) | 20 A |
最大漏源导通电阻 | 0.45 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-247 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 370 W |
最大脉冲漏极电流 (IDM) | 80 A |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
20N60G-T47-T | 20N60G-T3P-T | 20N60L-T3P-T | 20N60L-T47-T | 20N60_15 | |
---|---|---|---|---|---|
描述 | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - |
Reach Compliance Code | compliant | compliant | compliant | compliant | - |
雪崩能效等级(Eas) | 1200 mJ | 1200 mJ | 1200 mJ | 1200 mJ | - |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
最小漏源击穿电压 | 600 V | 600 V | 600 V | 600 V | - |
最大漏极电流 (Abs) (ID) | 20 A | 20 A | 20 A | 20 A | - |
最大漏极电流 (ID) | 20 A | 20 A | 20 A | 20 A | - |
最大漏源导通电阻 | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.45 Ω | - |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - |
元件数量 | 1 | 1 | 1 | 1 | - |
端子数量 | 3 | 3 | 3 | 3 | - |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
最大功率耗散 (Abs) | 370 W | 300 W | 300 W | 370 W | - |
最大脉冲漏极电流 (IDM) | 80 A | 80 A | 80 A | 80 A | - |
表面贴装 | NO | NO | NO | NO | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved