UNISONIC TECHNOLOGIES CO., LTD
15N20
15A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
15N20
is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
R
DS(ON)
, high switching speed, high current capacity and low gate
charge.
The UTC
15N20
is universally applied in low voltage such as
automotive, high efficiency switching for DC/DC converters and DC
motor control, etc.
FEATURES
* R
DS(ON)
<0.28Ω @ V
GS
=10V
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
15N20L-TA3-T
15N20G-TA3-T
15N20L-TN3-R
15N20G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-717.D
15N20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AS
E
AS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
200
V
±30
V
Continuous
15
A
Continuous Drain Current
Pulsed
60
A
Single Pulsed Avalanche Current
15
A
Single Pulsed Avalanche Energy
340
mJ
TO-220
145
Power Dissipation
P
D
W
TO-252
83
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220
TO-252
TO-220
TO-252
θ
JA
θ
JC
RATINGS
62.5
110
0.86
1.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
200
V
1
µA
+100 nA
-100 nA
5
0.18 0.28
610
145
42
27
5.6
10
39
63
210
83
800
200
60
32
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=200V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
GS
=10V, V
DD
=50V, I
D
=1.3A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=10V, R
L
=30
Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=15A, V
GS
=0V
3
45
90
230
110
15
60
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-717.D
15N20
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
0
300
Drain Current, I
D
(µA)
250
200
150
100
50
0
0
50
150
200 250
100
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.7
1.4
3.5 4.2
2.1 2.8
Gate Threshold Voltage, V
TH
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Body-Diode Continuous Current, I
S
(A)
Drain Current, I
D
(A)
3 of 3
QW-R502-717.D
汽车电子
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