UNISONIC TECHNOLOGIES CO., LTD
8N65K-MT
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
8N65K-MT
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 1.3
Ω
@ V
GS
= 10 V, I
D
= 4 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
TO-220F2
TO-220F3
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
8N65KL-TF1-T
8N65KG-TF1-T
8N65KL-TF2-T
8N65KG-TF2-T
8N65KL-TF3T-T
8N65KG-TF3T-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
8N65KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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1 of 6
QW-R502-A98.D
8N65K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
8
A
Drain Current
Pulsed (Note 2)
I
DM
32
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
350
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
48
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=10.93mH, I
AS
=8A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤8A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
2.6
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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2 of 6
QW-R502-A98.D
8N65K-MT
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
10
µA
100 nA
-100 nA
V/°C
4.0
1.3
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0 V, I
D
= 250
μA
650
V
DS
= 650 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 4A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
=0.5A,
Turn-On Rise Time
t
R
R
G
= 25Ω
Turn-Off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, I
D
=1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=8A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
0.7
0.9
800 1000
110 130
7
15
57
62
150
70
26
7.5
6
70
90
170
90
45
1.4
8
32
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3 of 6
QW-R502-A98.D
8N65K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-A98.D
8N65K-MT
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
D.U.T.
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-A98.D
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