UNISONIC TECHNOLOGIES CO., LTD
6N90Z
Preliminary
Power MOSFET
6.2A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220
The UTC
6N90Z
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide costumers
with planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
6N90Z
is generally applied in high efficiency switch
mode power supplies.
1
TO-262
FEATURES
* R
DS(ON)
< 2.3Ω @V
GS
= 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
6N90ZL-TA3-T
6N90ZG-TA3-T
6N90ZL-TQ2-T
6N90ZG-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING INFORMATION
PACKAGE
TO-220
TO-262
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-953.b
6N90Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
±20
V
Continuous (T
C
=25°C)
I
D
6.2
A
Drain Current
Pulsed (Note 2)
I
DM
24
A
Single Pulsed (Note 3)
E
AS
300
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
16.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
125
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.6mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
900
V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
1.07
V/°C
Drain-Source Leakage Current
I
DSS
V
DS
=900V, V
GS
=0V
10
µA
+5
µA
Forward
V
GS
=+20V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
-5
µA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.1A
1.72 2.3
Ω
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1270 1770 pF
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
110 145 pF
Reverse Transfer Capacitance
C
RSS
15
25
pF
SWITCHING PARAMETERS
45
55
nC
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
5
nC
(Note 1, 2)
Gate to Drain Charge
Q
GD
13
nC
Turn-ON Delay Time
t
D(ON)
80 110 ns
Rise Time
t
R
100 150 ns
V
DD
=30V, I
D
=1A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
210 250 ns
Fall-Time
t
F
125 145 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
6.2
A
Maximum Body-Diode Pulsed Current
I
SM
24.8 A
Drain-Source Diode Forward Voltage
V
SD
I
S
=6.2A, V
GS
=0V
1.4
V
Body Diode Reverse Recovery Time
t
RR
630
ns
I
S
=6.2A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
6.9
µC
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-953.b
UNISONIC TECHNOLOGIES CO., LTD
6N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-953.b
6N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Unclamped Inductive Switching Test Circuit
Time
t
P
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-974.B
6N90Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-974.B
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