UNISONIC TECHNOLOGIES CO., LTD
6N70-C
Preliminary
Power MOSFET
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
6N70-C
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC
6N70-C
is universally applied in high efficiency
switch mode power supply.
FEATURES
* R
DS(ON)
<1.8Ω @ V
GS
=10V, I
D
=3A
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220F
TO-220F2
TO-251
TO-251S
TO-251S2
TO-251S4
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
6N70L-TF3-T
6N70G-TF3-T
6N70L-TF2-T
6N70G-TF2-T
6N70L-TM3-T
6N70G-TM3-T
6N70L-TMS-T
6N70G-TMS-T
6N70L-TMS2-T
6N70G-TMS2-T
6N70L-TMS4-T
6N70G-TMS4-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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QW-R502-A52.c
6N70-C
PARAMETER
Drain-Source Voltage
Gate-Source Voltage (Note 2)
Drain Current
Avalanche Current (Note 2)
Avalanche Energy
Continuous
Pulsed
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
SYMBOL
V
DSS
V
GSS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
RATINGS
700
±30
6
3.8
24
6
108
13
2.5
40
42
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220F
TO-220F2
Power Dissipation
P
D
W
TO-251/TO-251S
55
TO-251S2/TO-251S4
TO-220F
0.32
TO-220F2
0.33
Linear Derarting Factor
P
D
W/°C
TO-251/TO-251S
0.44
TO-251S2/TO-251S4
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 6mH, I
AS
= 6A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤140A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
110
3.1
2.9
2.27
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
PARAMETER
TO-220F/TO-220F2
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-220F
TO-220F2
Junction to Case
TO-251/TO-251S
TO-251S2/TO-251S4
θ
JC
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-A52.c
6N70-C
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
700
TYP MAX UNIT
V
0.79
V/°C
25
µA
250 µA
+100 nA
-100 nA
4.0
1.8
1000
120
13
75
70
210
70
40
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
BV
DSS
I
D
=250µA, V
GS
=0V
∆BV
DSS
/∆T
J
I
D
=250µA
V
DS
=700V
I
DSS
V
DS
=560V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA, V
DS
=5V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V,
Gate to Source Charge
Q
GS
I
D
=1.3A (Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
I
SM
(Note 3)
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V, T
J
= 25°C
(Note 2)
Notes: 1. Pulse Test: Pulse width
≤
250µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
2.0
1.5
700
79
6
55
50
180
50
25
6.5
4.8
6
24
1.4
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A52.b
6N70-C
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
300nF
V
DS
3mA
Gate Charge Test Circuit
V
DS
R
G
R
D
90%
Gate Charge Waveforms
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
V
DS
R
G
I
D
BV
DSS
L
I
AS
Resistive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-A52.b
6N70-C
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A52.b
Microchip MCU
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