UNISONIC TECHNOLOGIES CO., LTD
6N65Z-Q
6.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N65Z-Q
is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* R
DS(ON)
= 1.85Ω @V
GS
= 10V, I
D
=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
6N65ZL-TF3-T
6N65ZG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-978, A
6N65Z-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
100
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
P
D
40
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J.
3. L = 14mH, I
AS
= 3.7A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
3.2
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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QW-R502-978. A
6N65Z-Q
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250μA
650
Drain-Source Leakage Current
I
DSS
V
DS
= 650V, V
GS
= 0V
10
5
Forward
V
GS
= 20V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
5
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.1A
1.7 1.85
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
750 900
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
65
80
Reverse Transfer Capacitance
C
RSS
10.5 13
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
50
70
Turn-On Rise Time
t
R
55
75
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
150 170
Turn-Off Fall Time
t
F
70
90
75
95
Total Gate Charge
Q
G
V
DS
=520V, I
D
=6.2A, V
GS
=10V
Gate-Source Charge
Q
GS
18
(Note 1, 2)
Gate-Drain Charge
Q
GD
19
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
1.4
Maximum Continuous Drain-Source Diode
I
S
6.2
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8
Forward Current
290
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
2.35
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNIT
V
μA
μA
μA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
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QW-R502-978. A
6N65Z-Q
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-978. A
6N65Z-Q
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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QW-R502-978. A
微控制器 MCU
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