UNISONIC TECHNOLOGIES CO., LTD
6N65-P
6.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N65-P
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* R
DS(ON)
< 2.0Ω @ V
GS
= 10V, I
D
= 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
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Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TM3-T
6N65G-TM3-T
TO-251
6N65L-TMS-T
6N65G-TMS-T
TO-251S
6N65L-TMS2-T
6N65G-TMS2-T
TO-251S2
6N65L-TMS4-T
6N65G-TMS4-T
TO-251S4
6N65L-TN3-R
6N65G-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-977.D
6N65-P
Power MOSFET
MARKING
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6N65-P
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
130
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125
W
TO-220F/TO-220F1
40
W
Power Dissipation
P
D
TO-251/TO-251S
TO-251S2/TO-251S4
55
W
TO-252
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 7.2mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
1.0
3.2
θ
JC
2.27
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1
Junction to Ambient TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
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6N65-P
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 30V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.1A
1.6
2
Ω
DYNAMIC CHARACTERISTICS
800 1000 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
80 120 pF
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
10
25
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
40
60
ns
Turn-On Rise Time
t
R
40
60
ns
V
DD
=30V, I
D
=0.5A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
140 160 ns
Turn-Off Fall Time
t
F
60
80
ns
Total Gate Charge
Q
G
26
90 nC
V
DS
=50V, I
D
=1.3A,
Gate-Source Charge
Q
GS
5.6
nC
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
6.0
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8 A
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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6N65-P
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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