UNISONIC TECHNOLOGIES CO., LTD
6N60-C
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N60-C
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in switching power supplies and adaptors.
FEATURES
* R
DS(ON)
< 1.5Ω @ V
GS
=10V, I
D
=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
6N60L-TF3-T
6N60G-TF3-T
TO-220F
6N60L-TF1-T
6N60G-TF1-T
TO-220F1
6N60L-TMS-T
6N60G-TMS-T
TO-251S
6N60L-TMS2-T
6N60G-TMS2-T
TO-251S2
6N60L-TMS4-T
6N60G-TMS4-T
TO-251S4
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-A50.C
6N60-C
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A50.C
6N60-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
310
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220/TO-220F1
40
W
Power Dissipation
P
D
TO-251S/TO-251S2/
55
W
TO-251S4
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 17mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
110
3.2
θ
JC
2.27
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220/TO-220F1
Junction to Ambient
TO-251S/TO-251S2/
TO-251S4
TO-220/TO-220F1
Junction to Case
TO-251S/TO-251S2/
TO-251S4
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3 of 7
QW-R502-A50.C
6N60-C
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BV
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX
UNI
T
V
GS
=0V, I
D
=250μA
600
V
V
DS
=600V, V
GS
=0V
10
μA
Drain-Source Leakage Current
I
DSS
V
DS
=480V, V
GS
=0V, T
J
=125°C
100
μA
Forward
V
GS
=30V, V
DS
=0V
100 nA
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.1A
1.1 1.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
650
pF
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f =1.0 MHz
95
pF
Reverse Transfer Capacitance
C
RSS
8
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
54
ns
Turn-On Rise Time
t
R
46
ns
V
DD
=30V, I
D
=1.0A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
180
ns
Turn-Off Fall Time
t
F
56
ns
25
nC
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, V
GS
=10 V
Gate-Source Charge
Q
GS
6.6
nC
(Note 1, 2)
Gate-Drain Charge
Q
GD
4.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8 A
Forward Current
Reverse Recovery Time
t
rr
290
ns
V
GS
=0 V, I
S
=6.2 A,
dI
F
/dt=100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
2.35
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A50.C
6N60-C
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A50.C
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