UNISONIC TECHNOLOGIES CO., LTD
4N80
4.0A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N80
is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
4N80
is universally applied in high efficiency switch
mode power supply.
1
Power MOSFET
1
TO-251
TO-220F
1
1
TO-262
TO-220F1
FEATURES
* R
DS(on)
=3.0Ω @V
GS
=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
1
TO-220F2
1
TO-220
SYMBOL
2.Drain
1
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N80L-TA3-T
4N80G-TA3-T
4N80L-TF3-T
4N80G-TF3-T
4N80L-TF1-T
4N80G-TF1-T
4N80L-TF2-T
4N80G-TF2-T
4N80L-TN3-R
4N80G-TN3-R
4N80L-TN3-T
4N80G-TN3-T
4N80L-TM3-T
4N80G-TM3-T
4N80L-T2Q-T
4N80G-T2Q-T
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-252
TO-252
TO-251
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Note:
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1 of 6
QW-R502-505.F
4N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
±30
V
Gate-Source Voltage
V
GSS
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
460
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220/TO-262
106
W
TO-220F/TO-220F1
36
W
Power Dissipation
P
D
TO-220F2
38
W
TO-252/TO-251
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=57mH, I
AS
=4A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
TO-220/TO-262
TO-220F/TO-220F1
Junction to Ambient
TO-220F2
TO-252/TO-251
TO-220/TO-262
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-252/TO-251
SYMBOL
θ
JA
RATINGS
62.5
110
1.18
3.47
3.28
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
JC
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2 of 6
QW-R502-505.F
4N80
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
800
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=4A (Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=4A,
R
G
=25Ω (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=4A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
TYP
MAX
UNIT
950
V
mV/°C
10
µA
100
µA
100
nA
-100
nA
5.0
3.0
880
100
12
25
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
2.3
680
75
8.6
19
4.2
9.1
16
45
35
35
40
100
80
80
4
16
1.4
575
3.65
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3 of 6
QW-R502-505.F
4N80
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-505.F
4N80
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
DS
Power MOSFET
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
V
GS
Switching Waveforms
10V
Q
GS
Q
G
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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5 of 6
QW-R502-505.F
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