UNISONIC TECHNOLOGIES CO., LTD
4N70-C
Preliminary
Power MOSFET
4A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N70-C
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.8Ω @V
GS
= 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N70L-TF1-T
4N70G-TF1-T
4N70L-TN3-R
4N70G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F1
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Note:
MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
TO-252
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A89.a
4N70-C
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4
A
4
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
150
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F1
36
Power Dissipation
P
D
W
TO-252
49
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 18.75mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
3.47
2.55
UNIT
°С/W
°С/W
PARAMETER
TO-220F1
Junction to Ambient
TO-252
TO-220F1
Junction to Case
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A89.a
4N70-C
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
μA
V
GS
= 0 V, I
D
= 250
μA
700
V
DS
= 700 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
= 50V, I
D
= 1.3A, I
G
= 100μA
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 0.5A, R
G
= 25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4A,
dI/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
10
100
nA
-100
0.6
V/°С
4.0
2.8
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
μC
2.6
800 950
320 400
28 40
16.5
4.0
3.7
34 40
30 60
40 100
39 70
1.4
4
16
250
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A89.a
4N70-C
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-A89.a
4N70-C
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A89.a
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