UNISONIC TECHNOLOGIES CO., LTD
4N65-C
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N65-C
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 3.0Ω @ V
GS
= 10 V, I
D
= 2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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QW-R502-B27.B
4N65-C
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note2)
I
AR
4.0
A
Continuous
I
D
4.0
A
Drain Current
16
A
Pulsed (Note2)
I
DM
Single Pulsed (Note3)
E
AS
150
mJ
Avalanche Energy
5.6
mJ
Repetitive (Note2)
E
AR
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.6
V/ns
Power Dissipation
P
D
36
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 18.75mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.47
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
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4N65-C
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250μA
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 480 V, T
C
=125°С
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
650
10
100
100
-100
2.0
4.0
3.0
425
55
5.8
16.5
4
3.4
37
33
45
40
1.4
4.0
16
320
2.0
V
μA
μA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
nC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, I
G
=100μA
Gate-Source Charge
Q
GS
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.0A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
RR
I
F
=4.0A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
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4N65-C
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65-C
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
V
GS
R
G
R
L
V
DD
Power MOSFET
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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QW-R502-B27.B
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