UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Preliminary
Power MOSFET
The UTC
4N60K-MT
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
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QW-R502-B30.e
4N60K-MT
ORDERING INFORMATION
Preliminary
Power MOSFET
Ordering Number
Lead Free
Halogen Free
4N60KL-TA3-T
4N60KG-TA3-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TF2-T
4N60KG-TF2-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TM3-T
4N60KG-TM3-T
4N60KL-TMS-T
4N60KG-TMS-T
4N60KL-TMS2-T
4N60KG-TMS2-T
4N60KL-TMS4-T
4N60KG-TMS4-T
4N60KL-TN3-R
4N60KG-TN3-R
4N60KL-TND-R
4N60KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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MARKING
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QW-R502-B30.e
4N60K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
Continuous
I
D
4.0
A
Drain Current
16
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
210
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
106
TO-220F/TO-220F1
36
TO-220F2/TO-220F3
P
D
Power Dissipation
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
TO-252/TO-252D
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.25mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
1.18
3.47
θ
JC
3.4
2.50
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R502-B30.e
4N60K-MT
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
GS
=0V, I
D
=250μA
600
V
V
DS
=600V, V
GS
=0V
10
μA
Drain-Source Leakage Current
I
DSS
V
DS
=600V, V
GS
=0V, T
C
=125°С
10
μA
Forward
V
GS
=30V, V
DS
=0V
100 nA
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
=0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=2.2A
1.79 2.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
425 575 pF
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
55
75
pF
f = 1MHz
6
11
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
45
ns
Turn-On Rise Time
t
R
49
ns
V
DD
= 30V, I
D
= 0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
80
ns
Turn-Off Fall Time
t
F
43
ns
Total Gate Charge
Q
G
20
nC
V
DS
= 50V,I
D
= 1.3A,
Gate-Source Charge
Q
GS
5.6
nC
V
GS
= 10V (Note 1, 2)
4.0
nC
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6 A
Forward Current
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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QW-R502-B30.e
4N60K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
Preliminary
Power MOSFET
D.U.T.
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-B30.e
微控制器 MCU
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