UNISONIC TECHNOLOGIES CO., LTD
30N06V-Q
Preliminary
Power MOSFET
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
30N06V-Q
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
* R
DS(ON)
< 40mΩ@V
GS
= 10 V, I
D
=15A
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
30N06VL-TM3-T
30N06VG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-A29. a
30N06V-Q
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±20
V
T
C
= 25°C
30
A
Continuous Drain Current
I
D
T
C
= 100°C
21.3
A
Pulsed Drain Current (Note 2)
I
DM
120
A
250
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
8
mJ
Power Dissipation
P
D
46
W
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
110
2.85
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A29. a
30N06V-Q
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
60
V
V
DS
= 60 V, V
GS
= 0 V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
I
D
=250μA,
0.06
V/°C
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
1.6
2.4
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 15 A
40
mΩ
DYNAMIC CHARACTERISTICS
800
pF
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V,
Output Capacitance
C
OSS
300
pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
50
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
30
ns
Turn-On Rise Time
t
R
50
ns
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
280
ns
Turn-Off Fall Time
t
F
120
ns
Total Gate Charge
Q
G
30
nC
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
5
nC
I
D
= 24A (Note 1, 2)
Gate-Drain Charge
Q
GD
8
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A29. a
30N06V-Q
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A29. a
30N06V-Q
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A29. a
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