UNISONIC TECHNOLOGIES CO., LTD
15N25-P
Preliminary
Power MOSFET
15A, 250V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
15N25-P
is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
R
DS(ON)
, high switching speed, high current capacity and low gate
charge.
The UTC
15N25-P
is universally applied in low voltage such as
automotive, high efficiency switching for DC/DC converters and DC
motor control, etc.
FEATURES
* R
DS(ON)
=0.25Ω @ V
GS
=10V, I
D
=7.5A
* Low Gate Charge (Typical 33nC)
* Low C
RSS
(Typical 25pF)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
15N25L-TF1-T
15N25G-TF1-T
15N25L-TF1-R
15N25G-TF1-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-A24.a
15N25-P
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
DSS
250
V
V
GSS
±30
V
15
A
Continuous
I
D
Continuous Drain Current
Pulsed
I
DM
60
A
Single Pulsed Avalanche Current
I
AS
15
A
Single Pulsed Avalanche Energy
E
AS
340
mJ
Power Dissipation
P
D
83
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
110
1.5
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
250
V
1
µA
+100 nA
-100 nA
4
0.18 0.25
830 1080
200 260
25
33
33
6
6.7
23
50
314
89
40
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=250V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=120V, I
D
=18A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω,
V
GS
=10V, R
L
=30
Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
I
S
Current
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=15A, V
GS
=0V
2
35
74
332
97
15
60
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-A24.a
15N25-P
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-A24.a
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
