UNISONIC TECHNOLOGIES CO., LTD
8N70K-MT
8A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
8N70K-MT
is an N-channel power MOSFET using
UTC’s advanced technology to provide the customers with minimum
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode.
FEATURES
* R
DS(ON)
< 1.4Ω @ V
GS
=10V, I
D
=4A
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
8N70KL-TF1-T
8N70KG-TF1-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R205-034.B
8N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
700
V
±30
V
T
C
=25°C
8
A
Continuous
I
D
Drain Current
T
C
=100°C
4.8
A
32
A
Pulsed (Note 4)
I
DM
Avalanche Current
Repetitive (Note 3)
I
AS
8
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
300
mJ
Junction Temperature
T
J
+150
°C
Power Dissipation (T
C
=25°C)
P
D
49
W
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 9.37mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. Limited by maximum junction temperature
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.55
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
Note: 3urface mounted on FR4 board t≤10sec
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=700V, V
GS
=0V
V
DS
=560V, TC=125°С
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
MIN TYP MAX UNIT
700
1
100
+10
-10
2.0
4.0
1.4
1120
113
21
82
85
125
60
26
8
6
8
32
1.4
V
µA
µA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DD
=30V, I
D
=0.5A,
Rise Time
t
R
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V,
Gate to Source Charge
Q
GS
I
D
=1.3A (Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral reverse diode in the
MOSFET
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
Notes: 1. Essentially independent of operating temperature.
2. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-034.B
8N70K-MT
TEST CIRCUITS AND WAVEFORMS
V
DS
Power MOSFET
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-034.B
8N70K-MT
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
V
DS
-
+
-
L
D.U.T.
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R205-034.B
8N70K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, I
D
(µA)
Drain Current, I
D
(A)
4
3
2
I
D
=4A, V
GS
=10V
Body-Diode Continuous Current, I
S
(A)
5
Drain-Source On-State Resistance
Characteristics
10
8
6
4
2
0
0
Drain Current, I
D
(µA)
Body-Diode Continuous Current vs.
Source to Drain Voltage
1
0
0
1.5
3
4.5
7.5
6
Drain to Source Voltage, V
DS
(V)
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-034.B
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