UNISONIC TECHNOLOGIES CO., LTD
8N60K-MT
8A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
8N60K-MT
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
< 1.2Ω
@
V
GS
= 10V, I
D
= 4.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
TO-220
8N60KL-TA3-T
8N60KG-TA3-T
8N60KL-TF1-T
8N60KG-TF1-T
TO-220F1
8N60KL-TF2-T
8N60KG-TF2-T
TO-220F2
TO-220F
8N60KL-TF3-T
8N60KG-TF3-T
8N60KL-TF3T-T
8N60KG-TF3T-T
TO-220F3
Note: Pin Assignment: G: Gate
D: Drain
S: Source
8N60KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3
(3) L: Lead Free, G: Halogen Free and Lead Free
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-035.D
8N60K-MT
MARKING
Power MOSFET
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QW-R205-035.D
8N60K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
8
A
Drain Current
Pulsed (Note 2)
I
DM
32
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
365
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
147
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
TO-220F2/TO-220F3
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L = 11.4mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C.
4. I
SD
≤7.5A,
di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2/TO-220F3
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QW-R205-035.D
8N60K-MT
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
600
V
V
DS
= 600 V, V
GS
= 0V
10
µA
Forward
V
GS
= 30 V, V
DS
= 0V
100 nA
Gate-Source Leakage Current
I
GSS
-100 nA
Reverse
V
GS
= -30 V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4.0A
1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1120 1255 pF
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
120 135 pF
f = 1MHz
13
16
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
28
36
nC
V
DS
=50V, V
GS
=1.0V,
Gate-Source Charge
Q
GS
8
nC
I
D
=1.3A (Note 1, 2)
6
nC
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
80
90
ns
Turn-On Rise Time
t
R
89 100 ns
V
DD
=30V, I
D
=0.5A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
125 160 ns
Turn-Off Fall Time
t
F
64
80
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 8A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
8
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
32
A
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
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QW-R205-035.D
8N60K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-035.D
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