UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6N40K-TA
6A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N40K-TA
is an N-Channel enhancement mode
power MOSFET using UTC’s perfect planar stripe, DMOS
technology to provide customers with superior switching
performance and minimum on-state resistance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC
6N40K-TA
is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
FEATURES
* R
DS(ON)
<0.6Ω @ V
GS
=10V, I
D
=3A
* Fast switching speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
6N40KL-TA3-T
6N40KG-TA3-T
TO-220
6N40KL-TF1-T
6N40KG-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
6N40KL-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, TF1: TO-220F1
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-052.a
6N40K-TA
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6
A
6 (Note 5)
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
24(Note 5)
A
240
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
8.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
73
Power Dissipation
P
D
W
TO-220F1
38
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=13.5mH, I
AS
=6A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤6A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1.71
3.31
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-220F1
TO-220
Junction to Case
TO-220F1
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2 of 6
QW-R205-052.a
6N40K-TA
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
400
0.54
1
10
+100
-100
2.0
4.0
0.6
490
95
8.4
65
6.2
8.8
60
65
105
44
6
24
1.4
300
1.75
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Referenced to 25°C
V
DS
=400V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=320V, T
J
=125°C
Forward
V
DS
=0V ,V
GS
=+30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
V
GS
=10V (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=6A, V
R
=50V
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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3 of 6
QW-R205-052.a
6N40K-TA
TEST CIRCUITS AND WAVEFORMS
+
Preliminary
Power MOSFET
D.U.T.
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R205-052.a
6N40K-TA
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R205-052.a
Microchip MCU
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