UNISONIC TECHNOLOGIES CO., LTD
4N70-S
Preliminary
Power MOSFET
4A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-252
The UTC
4N70-S
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 3.2
Ω
@V
GS
= 10 V, I
D
=2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
4N70L-TN3-R
Pin Assignment: G: Gate
Halogen Free
4N70G-TN3-R
D: Drain
S: Source
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
Note:
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R205-23.a
4N70-S
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
4
A
Drain Current
Pulsed (Note 2)
I
DM
16
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
135
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
49
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 16.87mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
110
2.55
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
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QW-R205-023.a
4N70-S
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
μA
V
GS
= 0 V, I
D
= 250
μA
700
V
DS
= 700 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
0.6
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2 A
DYNAMIC CHARACTERISTICS
450
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
48
f = 1MHz
Reverse Transfer Capacitance
C
RSS
4
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
60
Turn-On Rise Time
t
R
18
V
DD
= 30V, I
D
= 0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
92
Turn-Off Fall Time
t
F
15
Total Gate Charge
Q
G
13.8
V
DS
= 50V, I
D
= 1.3A,
Gate-Source Charge
Q
GS
5
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
1.4
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
10
100
nA
-100
V/°С
4.0
3.2
575
70
8
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
20
1.4
4
16
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3 of 6
QW-R205-023.a
4N70-S
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R205-023.a
4N70-S
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R205-023.a
嵌入式系统
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