UNISONIC TECHNOLOGIES CO., LTD
15NM50
Preliminary
Power MOSFET
15A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 15NM50 is an Super Junction MOSFET Structure . It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 15NM50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* R
DS(ON)
< 0.35Ω @ V
GS
=10V, I
D
=7.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
15NM50L-TF1-T
15NM50G-TF1-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
15NM50L-TF1-T
(1) Packing Type
(2) Package Type
(3) Green Package
(1) T: Tube
(2) TF1:TO-220F1
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-043.a
15NM50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
500
V
Gate to Source Voltage
V
GSS
±30
V
T
C
=25°C
15 (Note 2)
A
Continuous Drain Current
I
D
T
C
=100°C
7 (Note 2)
A
Pulsed Drain Current (Note 3)
I
DM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
E
AS
225
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
T
C
=25°C
52
W
Power Dissipation
P
D
Derate above 25°C
0.416
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=2mH, I
AS
=15A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
5. I
SD
≤11A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.4
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN
500
0.5
TYP MAX UNIT
V
V/°C
10
µA
100 µA
±100 nA
4.0
0.35
625
330
15
55
95
295
125
41
6
12
11
44
1.4
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250μA,Referenced to 25°C
V
DS
=500V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, T
J
=125°C
Gate-Source Leakage Current
I
GSS
V
DS
=0V ,V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
V
GS
=10V (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A ,
Gate-Source Charge
Q
GS
I
G
=100µA (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=15A, V
GS
=0V
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
2.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-043.a
15NM50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R205-043.a
15NM50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R205-043.a
15NM50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R205-043.a
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