UNISONIC TECHNOLOGIES CO., LTD
14N65K-MT
Preliminary
Power MOSFET
14A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F2
The UTC
14N65K-MT
is an N-Channel enhancement mode
power MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC
14N65K-MT
is ideally suitable for high efficiency switch
mode power supply, power factor correction and electronic lamp
ballast based on half bridge topology.
FEATURES
* R
DS(ON)
< 0.63Ω @ V
GS
= 10V, I
D
= 7 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F2
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
14N65KL-TF2-T
14N65KG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
14N65KL-TF2-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-B11.d
14N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
14
A
Pulsed Drain Current (Note 2)
I
DM
48
A
Avalanche Current (Note 2)
I
AR
14
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
325
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
P
D
150
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 3.31mH, I
AS
= 14A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤14A,
di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.83
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
V
GS
= 0V, I
D
= 250
μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
V
GS
= 30V, V
DS
= 0V
100 nA
Gate-Source Leakage Current
I
GSS
V
GS
= -30V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250mA,Referenced to 25°C
0.5
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 7A
0.63
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
980
pF
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
185
pF
Reverse Transfer Capacitance
C
RSS
10
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
89
nS
Turn-On Rise Time
t
R
116
nS
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
388
nS
145
nS
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
47
nC
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate-Source Charge
Q
GS
12.2
nC
(Note 1, 2)
11.6
nC
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 14A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
14
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
56
A
Forward Current
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N65K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N65K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B11.d
14N65K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B11.d
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