d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
www.vishay.com
1
New Product
SiB404DK
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 12 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= 2.5 V, I
D
= 2 A
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.2 V, I
D
= 0.5 A
Forward
Transconductance
a
g
fs
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 7 A, V
GS
= 0 V
0.8
15
5
8
7
T
C
= 25 °C
V
DD
= 6 V, R
L
= 0.86
I
D
7 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 9 A
V
DS
= 10 V, I
D
= 3 A
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
9
35
1.2
30
10
A
V
ns
nC
ns
15
0.015
0.018
0.021
0.035
30
9.6
0.9
1.7
3.2
5
20
20
10
6.4
10
40
40
20
ns
15
nC
0.019
0.022
0.026
0.065
S
0.35
12
12
- 2.5
0.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source On-State Resistance
a
R
DS(on)
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
35
V
GS
= 5 V thru 2 V
30
8
I
D
- Drain Current (A)
25
20
15
10
5
0
0.0
V
GS
= 1.5 V
I
D
- Drain Current (A)
6
10
4
T
C
= 25
°C
T
C
= 125
°C
2
V
GS
= 1 V
0
0.0
T
C
= - 55
°C
0.5
1.0
1.5
2.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.06
V
GS
= 1.2 V
0.05
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1000
1200
Transfer Characteristics
C
iss
800
0.04
V
GS
= 1.8 V
0.03
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
600
400
C
oss
200
C
rss
0.01
0.00
0
5
10
15
20
25
30
35
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
I
D
= 9 A
4
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 3 V
1.4
1.6
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 3 A
1.2
3
V
DS
= 6 V
2
V
DS
= 9.6 V
1.0
V
GS
= 1.2 V, I
D
= 0.5 A
1
0.8
0
0
2
4
6
8
10
12
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
www.vishay.com
3
New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
0.06
I
D
= 3 A
0.05
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
0.04
0.03
T
J
= 125
°C
0.02
T
J
= 25
°C
1
T
J
= 25
°C
0.01
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.7
On-Resistance vs. Gate-to-Source Voltage
20
0.6
15
0.5
0.4
I
D
= 250 μA
0.3
Power (W)
100
125
150
V
GS(th)
(V)
10
5
0.2
0.1
- 50
- 25
0
25
50
75
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
1000
Single Pulse Power, Junction-to-Ambient
100
I
D
- Drain Current (A)
Limited by R
DS(on)
*
10
100 μs
1 ms
1
10 ms
T
A
= 25
°C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
25
15
20
I
D
- Drain Current (A)
12
15
Po
w
er (W)
9
10
Package Limited
6
5
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
Current Derating*
T
C
- Case Temperature (°C)
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[详细]
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