SiA430DJT-T1-GE3 (Lead (Pb)-free and halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
20
± 20
12
a
12
a
12
a, b, c
10.1
b, c
40
12
a
2.9
b, c
19.2
12.3
3.5
b, c
2.2
b, c
-55 to +150
260
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
≤
5s
Steady State
SYMBOL
R
thJA
R
thJC
TYPICAL
28
5.3
MAXIMUM
36
6.5
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
m
m
m
2.0
Top View
1
m
5m
3
G
Bottom View
SiA430DJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.8
18
7
8
10
12
40
1.2
30
15
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 12 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
800
200
90
12
5.3
2
1.4
2.5
16
10
15
10
10
8
17
8
-
-
-
18
9
-
-
5
25
15
25
15
15
15
30
15
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, I
D
= 7 A
20
-
-
1
-
-
-
20
-
-
-
-
24
-5.6
-
-
-
-
-
0.0108
0.0146
16
-
-
-
3
± 100
1
10
-
0.0135
0.0185
-
V
mV/°C
V
nA
μA
A
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 5 V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 4 V
4
5
T
C
= - 55 °C
Vishay Siliconix
24
3
T
C
= 125 °C
2
16
V
GS
= 3 V
8
1
T
C
= 25 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
1000
Transfer Characteristics
0.025
C
iss
R
DS(on)
- On-Resistance (Ω)
800
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
200
C
rss
0.005
0
8
16
24
32
40
I
D
- Drain Current (A)
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
600
400
C
oss
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 12 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
V
DS
= 5 V
6
V
DS
= 15 V
1.6
I
D
= 7 A
1.4
Capacitance
V
GS
= 10 V
1.2
4
1.0
2
0.8
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S14-2236-Rev. A, 10-Nov-14
On-Resistance vs. Junction Temperature
Document Number: 62991
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
100
0.055
I
D
= 5 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.045
Vishay Siliconix
0.035
0.1
0.025
T
J
= 125 °C
0.015
T
J
= 25 °C
0
1
2
3
4
5
6
7
8
9
10
0.01
T
J
= - 50 °C
0.001
0.0
0.005
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.3
On-Resistance vs. Gate-to-Source Voltage
30
0.1
V
GS(th)
Variance (V)
25
20
I
D
= 1 mA
- 0.3
I
D
= 250 µA
- 0.5
5
- 0.7
- 50
Power (W)
150
- 0.1
15
10
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
10 µs
100 µs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
35
25
Vishay Siliconix
28
I
D
- Drain Current (A)
20
Power (W)
21
15
14
Package Limited
10
7
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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