SiS612EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
c, d
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
20
± 12
50
g
50
g
24.6
a, b
19.7
a, b
200
43.3
3.1
a, b
20
20
52
33
3.7
a, b
2.4
a, b
- 55 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, e
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
C
= 25 °C.
g. Package limited.
S13-1675-Rev. A, 29-Jul-13
Document Number: 62874
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th
)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A, V
GS
= 0 V
0.75
22
10
11
11
T
C
= 25 °C
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 14 A
V
GS
= 3.7 V, I
D
= 14 A
V
GS
= 2.5 V, I
D
= 13 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
50
200
1.2
44
20
A
V
ns
nC
ns
2060
558
365
46
22.5
4.1
5.3
1
16
65
40
12
9
5
34
4
2
24
98
60
20
18
10
51
8
ns
70
34
nC
pF
V
DS
= 10 V, I
D
= 14 A
20
0.0032
0.0035
0.0041
50
0.0039
0.0042
0.0058
S
0.5
20
18
- 3.5
1.2
± 10
±1
1
10
A
μA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1675-Rev. A, 29-Jul-13
Document Number: 62874
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.050
T
J
= 25
°C
0.040
I
GSS
-
Gate
Current (mA)
1.E-04
1.E-03
Vishay Siliconix
I
GSS
-
Gate
Current (A)
1.E-05
0.030
T
J
= 150
°C
1.E-06
0.020
1.E-07
T
J
= 25
°C
0.010
1.E-08
0.000
0
6
12
18
24
V
GS
-
Gate-Source
Voltage (V)
30
1.E-09
0
5
10
15
V
GS
-
Gate-to-Source
Voltage (V)
20
Gate Current vs. Gate-to-Source Voltage
2
V
GS
= 5 V thru 2 V
Gate Current vs. Gate-to-Source Voltage
50
40
I
D
- Drain Current (A)
1.5
I
D
- Drain Current (A)
T
C
= 25
°C
30
1
V
GS
= 1.5 V
20
0.5
10
T
C
= 125
°C
T
C
= - 55
°C
0
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0
0.3
0.6
0.9
1.2
V
GS
-
Gate-to-Source
Voltage (V)
1.5
Output Characteristics
0.005
3000
Transfer Characteristics
2400
R
DS(on)
- On-Resistance (Ω)
0.004
V
GS
= 2.5 V
C - Capacitance (pF)
V
GS
= 3.7 V
0.003
V
GS
= 4.5 V
0.002
1800
C
iss
1200
600
C
rss
C
oss
0.001
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current and Gate Voltage
S13-1675-Rev. A, 29-Jul-13
Capacitance
Document Number: 62874
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 5 V
Vishay Siliconix
1.9
I
D
= 14 A
V
GS
= 4.5 V, 3.7 V, 2.5 V
1.6
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 16 V
1.3
4
1
2
0
0
10
20
30
40
Q
g
- Total
Gate
Charge (nC)
50
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
0.012
I
D
= 20 A
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.009
T
J
= 125
°C
0.006
T
J
= 25
°C
0.003
I
S
-
Source
Current (A)
1
T
J
= 25
°C
0.1
0.0
0.3
0.6
0.9
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
1
On-Resistance vs. Gate-to-Source Voltage
50
I
D
= 250 μA
40
0.8
V
GS(th)
(V)
0.6
Power (W)
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
30
20
0.4
10
0.2
0
0.01
0.1
1
Time (s)
10
100
600
Threshold Voltage
S13-1675-Rev. A, 29-Jul-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62874
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
90
Vishay Siliconix
100
I
D
- Drain Current (A)
Limited by R
DS(on)
*
100 μs
10
I
D
- Drain Current (A)
72
1 ms
10 ms
54
Package Limited
36
1
100 ms
10s,
1
s
0.1
T
A
= 25
°C
0.01
0.1
DC
BVDSS Limited
100
18
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Safe Operating Area
64
Current Derating*
48
Power (W)
32
16
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1675-Rev. A, 29-Jul-13
Document Number: 62874
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
