). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 69013
S-82663-Rev. A, 03-Nov-08
www.vishay.com
1
SiS424DN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
=
0 V
0.8
25
12
13
12
T
C
= 25 °C
32
60
1.2
38
24
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.3
V
DS
= 10 V, V
GS
= 10 V, I
D
= 19.6 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 19.6 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
1200
410
150
20
9.5
3.6
2.4
1.4
15
13
20
10
10
8
19
7
2.8
23
20
30
20
20
16
29
14
ns
Ω
30
14.3
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 19.6 A
V
GS
=
4.5 V, I
D
= 16.6 A
V
DS
= 15 V, I
D
= 19.6 A
20
0.0053
0.0071
39
0.0064
0.0089
1.0
20
18
-5
2.5
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69013
S-82663-Rev. A, 03-Nov-08
SiS424DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 10 thru 4
V
1.2
50
I
D
- Drain Current (A)
1.0
I
D
- Drain Current (A)
40
V
GS
= 3
V
30
0.8
0.6
T
C
= 25 °C
0.4
T
C
= 125 °C
T
C
= - 55 °C
20
10
0.2
0
0
1
2
3
4
5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.012
1600
Transfer Characteristics
0.010
R
DS(on)
- On-Resistance (Ω)
1200
0.008
V
GS
= 4.5
V
C - Capacitance (pF)
C
iss
0.006
V
GS
= 10
V
800
C
oss
400
0.004
0.002
C
rss
0.000
0
10
20
30
40
50
60
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 19.6 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.5
(Normalized)
1.8
I
D
= 19.6 A
Capacitance
V
GS
= 10
V
1.2
V
GS
= 4.5
V
0.9
6
V
DS
= 10
V
4
V
DS
= 16
V
2
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69013
S-82663-Rev. A, 03-Nov-08
www.vishay.com
3
SiS424DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.030
10
R
DS(on)
- On-Resistance (Ω)
0.024
I
S
- Source Current (A)
0.018
T
J
= 150 °C
T
J
= 25 °C
1
0.012
T
J
= 125 °C
0.006
T
J
= 25 °C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.9
60
On-Resistance vs. Gate-to-Source Voltage
50
1.6
40
V
GS(th)
(V)
Power (W)
I
D
= 250
µA
1.3
30
20
1.0
10
0.7
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100
µs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69013
S-82663-Rev. A, 03-Nov-08
SiS424DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
75
60
I
D
- Drain Current (A)
45
Package Limited
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
50
2.0
40
1.5
Power (W)
30
Power (W)
1.0
20
0.5
10
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
随着阅读器与标签价格的降低和全球市场的扩大，射频标识 RFID(以下简称RFID)的应用与日俱增。标签既可由阅读器供电(无源标签)，也可以由标签的板上电源供电(半有源标签和有源标签)。由于亚微型无源 CMOS 标签的成本降低，库存和其他应用迅速增加。一些评估表明，随着无源标签的价格持续下降，几乎每一个售出产品的内部都将有一个 RFID 标签。由于无源 RFID 标签的重要性及其独特的工程实现...[详细]
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