d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63552
S11-2182-Rev. A, 07-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR798DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.43
35
30
15
20
T
C
= 25 °C
60
80
0.6
70
60
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
0.2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5050
895
425
86
41.6
12.5
12.8
0.7
17
11
43
9
35
28
39
13
1.4
34
22
80
18
65
55
70
26
ns
130
63
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
30
0.00170 0.00205
0.00220 0.00300
103
0.040
3.5
30
1
2.5
± 100
0.200
35
V
nA
mA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63552
S11-2182-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR798DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 3 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
48
6
T
C
= 25
°C
4
32
16
V
GS
= 2 V
0.0
0.5
1.0
1.5
2.0
2.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
0.0024
6500
Transfer Characteristics
0.0022
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.0020
C - Capacitance (pF)
5200
C
iss
3900
0.0018
2600
C
oss
0.0016
V
GS
= 10 V
1300
C
rss
0.0014
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 20 V
V
DS
= 10 V
4
1.6
1.8
I
D
= 20 A
Capacitance
V
GS
= 10 V
1.4
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
18
36
54
72
Q
g
- Total Gate Charge (nC)
90
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63552
S11-2182-Rev. A, 07-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR798DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
10
I
S
- Source Current (A)
T
J
= 150
°C
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.008
I
D
= 20A
1
0.006
0.1
0.004
T
J
= 125
°C
0.01
0.002
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain Voltage (V)
1.0
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
10
-1
200
On-Resistance vs. Gate-to-Source Voltage
10
-2
I
R
- Reverse Current (A)
30 V
160
20 V
Power (W)
10 V
10
-3
120
10
-4
80
10
-5
40
10
-6
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
I
DM
Limited
I
D
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1s
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63552
S11-2182-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR798DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
170
136
I
D
- Drain Current (A)
102
68
Package Limited
34
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
Power (W)
40
Power (W)
0
25
50
75
100
125
150
60
1.5
1.0
20
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63552
S11-2182-Rev. A, 07-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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