d. d.See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
S14-1009-Rev. B, 12-May-14
Document Number: 64730
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR158DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 10 V, I
D
= 20 A
MIN.
30
-
-
1.2
-
-
-
30
-
-
-
-
TYP.
-
24
-6.6
-
-
-
-
-
MAX.
-
-
-
2.5
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
0.00145 0.00180
0.00185 0.00230
100
4980
915
495
87
41.5
10.6
13.8
0.7
16
9
44
9
28
36
47
16
-
-
0.71
29
22
15
14
-
-
-
-
130
63
-
-
1.4
30
18
80
18
50
70
90
30
60
400
1.1
45
33
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
-
-
-
-
-
-
0.2
-
-
-
-
-
pF
nC
Ω
ns
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
-
-
-
T
C
= 25 °C
I
S
= 4 A
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1009-Rev. B, 12-May-14
Document Number: 64730
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR158DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 4 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 3 V
48
8
10
Vishay Siliconix
6
32
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
16
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0030
6500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0026
C - Capacitance (pF)
5200
0.0022
V
GS
= 4.5 V
3900
0.0018
V
GS
= 10 V
0.0014
2600
C
oss
1300
C
rss
0.0010
0
14
28
42
56
70
I
D
- Drain Current (A)
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 15 V
4
V
DS
= 20 V
I
D
= 20 A
1.6
Capacitance
10
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.2
1.0
2
0.8
0
0
18
36
54
72
90
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S14-1009-Rev. B, 12-May-14
On-Resistance vs. Junction Temperature
Document Number: 64730
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR158DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 25 °C
1
0.012
0.015
I
D
= 20 A
Vishay Siliconix
0.009
0.1
0.006
0.01
0.003
T
J
= 125 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
8
9
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
200
0.2
V
GS(th)
Variance (V)
160
- 0.4
I
D
= 250 µA
- 0.7
I
D
= 5 mA
Power (W)
150
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
I
D
- Drain Current (A)
I
DM
Limited
I
D
Limited
100 μs
1 ms
10 ms
Limited by R
DS(on)
*
10
1
100 ms
1
s
0.1
T
C
= 25
°C
Single
Pulse
10
s
BVDSS Limited
DC
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100
Safe Operating Area, Junction-to-Ambient
S14-1009-Rev. B, 12-May-14
Document Number: 64730
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR158DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
175
Vishay Siliconix
140
I
D
- Drain Current (A)
105
70
Package Limited
35
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
Power (W)
40
Power (W)
0
25
50
75
100
125
150
60
1.5
1.0
20
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling
the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this
rating falls below the package limit.
S14-1009-Rev. B, 12-May-14
Document Number: 64730
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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