Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel
S
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Source 1-to-Source 2 Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Source 1-to-Source 2 Current
(T
J
= 150 °C)
Pulsed Source 1-to-Source 2 Current (t = 100 μs)
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c
Symbol
V
S1S2
V
GS
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
I
SM
Limit
24
± 12
11
b
7.9
b
5.9
a
4.3
a
40
5.7
b
3
b
1.7
a
0.9
a
-55 to 150
260
Unit
V
I
S1S2
A
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
b
a, d
Symbol
t
≤
5s
Steady State
R
thJA
R
thJC
Typical
60
18
Maximum
75
22
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. The case is defined as the top surface of the package.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 120 °C/W.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Source 1-to-Source 2 Breakdown Voltage
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Source Current
On-State Source Current
a
V
S1S2
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
S1S2
I
S(on)
V
GS
= 0 V, I
S
= 250 μA
I
S
= 250 μA
V
SS
= V
GS
, I
S
= 250 μA
V
SS
= 0 V, V
GS
= ± 4.5 V
V
SS
= 0 V, V
GS
= ± 12 V
V
SS
= 24 V, V
GS
= 0 V
V
SS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
V
SS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
SS
= 1 A
Source1-to-Source 2 On-State Resistance
a
R
S1S2
V
GS
= 3.7 V, I
SS
= 1 A
V
GS
= 2.5 V, I
SS
= 1 A
V
GS
= 1.8 V, I
SS
= 1 A
Forward Transconductance
a
Dynamic
b
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
SS
= 12.5 V, R
L
= 12.5
Ω
I
SS
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
SS
= 12.5 V, R
L
= 12.5
Ω
I
SS
≅
1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
-
-
-
-
-
-
-
-
-
5.3
1.5
3.5
25
12
0.7
1.3
35
12
-
3
7
50
25
1.4
2.6
70
25
μs
kΩ
g
fs
V
SS
= 10 V, I
SS
= 1 A
24
-
0.4
-
-
-
-
5
-
-
-
-
-
-
3
-
-
-
-
-
-
0.0215
0.0222
0.0240
0.0260
15
-
-
0.9
± 0.2
± 10
1
10
-
0.0280
0.0290
0.0310
0.0370
-
S
Ω
V
mV/°C
V
μA
mA
μA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
10
-2
10
-3
1.2
I
GSS
-
Gate
Current (mA)
I
GSS
-
Gate
Current (A)
10
-4
10
-5
Vishay Siliconix
0.9
T
J
= 150
°C
T
J
= 25
°C
0.6
10
-6
10
-7
10
-8
T
J
= 25
°C
0.3
0
0
3
6
9
12
V
GS
-
Gate-Source
Voltage (V)
10
-9
0
3
6
9
12
V
GS
-
Gate-to-Source
Voltage (V)
Gate Current vs. Gate-Source Voltage
40
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Gate Current vs. Gate-Source Voltage
6
20
V
GS
= 1.5 V
4
T
C
= 25
°C
10
2
T
C
= 125
°C
T
C
= - 55
°C
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
1.7
R
DS(on)
- On-Resistance (Normalized)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
0.7
- 50
- 25
Transfer Characteristics
0.05
V
GS
= 4.5 V, 3.7 V, 2.5 V, 1.8V; I
D
= 1A
0.04
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8 V
V
GS
= 3.7 V
V
GS
= 2.5 V
0.03
0.02
V
GS
= 4.5 V
0.01
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
On-Resistance vs. Drain Current
S15-1171-Rev. B, 25-May-15
On-Resistance vs. Junction Temperature
Document Number: 62948
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.06
0.8
0.7
0.6
Vishay Siliconix
0.05
R
DS(on)
- On-Resistance (Ω)
I
D
= 1 A
0.04
V
GS(th)
(V)
T
J
= 125
°C
0.03
0.5
0.4
0.3
0.2
0.1
I
D
= 250 μA
0.02
T
J
= 25
°C
0.01
0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
30
T
J
= 150
°C
I
S
-
Source
Current (A)
10
T
J
= 25
°C
1
Power (W)
25
20
15
10
5
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
-
Source-to-Drain
Voltage (V)
0
0.01
0.1
1
Time (s)
10
100
1000
Source-Drain Diode Forward Voltage
Single Pulse Power (Junction-to-Ambient)
S15-1171-Rev. B, 25-May-15
Document Number: 62948
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
I
DM
Limited
100
µs
Vishay Siliconix
I
D(on)
Limited
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
10
s
1
s
DC
Safe Operating Area, Junction-to-Ambient
6
1.4
1.2
1.0
Power (W)
0
25
50
75
100
125
150
0.8
0.6
0.4
5
I
D
- Drain Current (A)
4
3
2
1
0.2
0
0
25
50
75
100
125
150
T
A
- Case Temperature (°C)
0
T
A
- Ambient Temperature (°C)
Current Derating*
Note
• When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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